About: Cheol Seong Hwang

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researcher

Attributes	Values
rdf:type	Item
description	forskare (sv) researcher (en) 연구원 (ko) investigador (es) wetenschapper (nl) дослідник (uk) वैज्ञानिक (hi) 研究者 (zh) investigador surcoreanu (ast)
rdfs:label	Cheol Seong Hwang (en) Cheol Seong Hwang (nl) Cheol Seong Hwang (ast) 황철성 (ko)
skos:prefLabel	Cheol Seong Hwang (en) Cheol Seong Hwang (nl) Cheol Seong Hwang (ast) 황철성 (ko)
name	Cheol Seong Hwang (en) Cheol Seong Hwang (nl) Cheol Seong Hwang (ast) 황철성 (ko)
given name	wds:Q87636812-B1CD08F8-9479-48A8-9A7C-E379E6DDBCFD
given name	Chul-sung
instance of	wds:Q87636812-7B7DB06A-A5DA-48FF-BD9F-DDC0F0E64E71
instance of	Homo sapiens
doctoral advisor	wds:Q87636812-c5ccc979-455b-7559-1e7f-81c4ce7cf28b
doctoral student	wds:Q87636812-99EB8FA6-1C68-490A-B5B3-E2C2E922E46E
doctoral advisor	Hyung Jun Kim
doctoral student	Seong Keun Kim
occupation	wds:Q87636812-1E317719-E2D0-48F7-A9EA-6FF475423839
employer	wds:Q87636812-F08D4CF8-AB93-46DF-B1A8-4A92C0D8F0BA
sex or gender	wds:Q87636812-57F4FF6E-4A54-4E40-8F1A-097A7532D4F3
DBLP author ID	wds:Q87636812-1BC6D71D-0FD0-4CD7-8DB8-3AE6DB691743
country of citizenship	wds:Q87636812-7379816D-D664-4E19-A12B-CB70C41CB7E4
educated at	wds:Q87636812-5BE944D1-AA7B-4D27-BEE4-E4C50021C330
family name	wds:Q87636812-77125756-0022-4A4E-932C-7ADAEBDC6727
DBLP author ID	https://dblp.org/pid/210/0969.rdf
occupation	researcher
employer	Seoul National University
sex or gender	male
DBLP author ID	210/0969
country of citizenship	Korea
educated at	Seoul National University
family name	Hwang
ORCID iD	wds:Q87636812-54A947CE-9C19-42FE-9568-355EA86E7FBD
ORCID iD	https://orcid.org/0000-0002-6254-9758
ORCID iD	0000-0002-6254-9758
IEEE Xplore author ID	wds:Q87636812-E1484180-0CAC-47BE-910C-62F5039288C0
IEEE Xplore author ID	37290750900
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q87636812
is author of	X-ray irradiation induced reversible resistance change in Pt/TiO2/Pt cells Low Temperature (<100°C) Deposition of Aluminum Oxide Thin Films by ALD with O[sub 3] as Oxidant Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition Titanium dioxide thin films for next-generation memory devices Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories. Chemically Conformal ALD of SrTiO[sub 3] Thin Films Using Conventional Metallorganic Precursors Nociceptive Memristor. Dispersion in Ferroelectric Switching Performance of Polycrystalline HfZrO Thin Films Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ film. Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin films. Asymmetry in electrical properties of Al-doped TiO2film with respect to bias voltage Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time Local Epitaxial Growth of Ru Thin Films by Atomic Layer Deposition at Low Temperature Role of Interfacial Reaction in Atomic Layer Deposition of TiO2Thin Films Using Ti(O-iPr)2(tmhd)2on Ru or RuO2Substrates Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory Growth of RuO2Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4Precursor and 5% H2Reduction Gas Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates Atomic layer deposition of hafnium oxide from tert-butoxytris(ethylmethylamido)hafnium and ozone: rapid growth, high density and thermal stability Growth Behavior of Al-Doped TiO2Thin Films by Atomic Layer Deposition Atomic Layer Deposition of Ru Thin Films Using 2,4-(Dimethylpentadienyl)(ethylcyclopentadienyl)Ru by a Liquid Injection System Characteristics of a Capacitive Probe Array for Direct Surface Charge Detection Transformation of the Crystalline Structure of an ALD TiO[sub 2] Film on a Ru Electrode by O[sub 3] Pretreatment Fabrication of a metal-oxide-semiconductor-type capacitive microtip array using SiO2 or HfO2 gate insulators Modeling of Negative Capacitance in Ferroelectric Thin Films An artificial nociceptor based on a diffusive memristor. Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films. High quality interfacial sulfur passivation via H2S pre-deposition annealing for an atomic-layer-deposited HfO2 film on a Ge substrate Structurally and Electrically Uniform Deposition of High-k TiO[sub 2] Thin Films on a Ru Electrode in Three-Dimensional Contact Holes Using Atomic Layer Deposition Reliability of neuronal information conveyed by unreliable neuristor-based leaky integrate-and-fire neurons: a model study Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor. Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (≤100°C) using O3 as an oxygen source Engineering of AlON interlayer in Al 2 O 3 /AlON/In 0.53 Ga 0.47 As gate stacks by thermal atomic layer deposition Ta-Doped SnO2 as a reduction–resistant oxide electrode for DRAM capacitors Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathode Impact of Bimetal Electrodes on Dielectric Properties of TiO2 and Al-Doped TiO2 Films Atomic Layer Deposition of SrTiO3Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors Investigation on the Growth Initiation of Ru Thin Films by Atomic Layer Deposition Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant Growth Characteristics of Atomic Layer Deposited TiO[sub 2] Thin Films on Ru and Si Electrodes for Memory Capacitor Applications Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaOx Film Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition. Structure and Electrical Properties of Al-Doped HfO2 and ZrO2 Films Grown via Atomic Layer Deposition on Mo Electrodes

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