About: Growth of RuO2Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4Precursor and 5% H2Reduction Gas

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About: Growth of RuO2Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4Precursor and 5% H2Reduction Gas Goto Sponge NotDistinct Permalink

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rdf:type	Item
description	wetenschappelijk artikel (nl) article scientifique publié en 2010 (fr) наукова стаття, опублікована в жовтні 2010 (uk) im Oktober 2010 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q58886073-004CA9FB-9991-4759-9624-62E1D20607A7
publication date	2010-10-26 00:00:00Z (xsd:dateTime)
author name string	wds:Q58886073-5F87C884-6F00-4DB3-9235-F1AA893A8D58 wds:Q58886073-A1431A83-9326-497C-9DC1-849F74C1C6C6 wds:Q58886073-AD2A0D9D-5269-4891-8E09-6994C0E02056 wds:Q58886073-BE42F22C-F5D0-4B4E-82A6-939C0C57DF07 wds:Q58886073-F5AC9551-8DAB-44C6-9E8C-2004CC3D00AD
author name string	Jeong Hwan Han Sang Woon Lee Sora Han Christian Dussarrat Julien Gatineau
rdfs:label	Growth of RuO2Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4Precursor and 5% H2Reduction Gas (en) Growth of RuO2Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4Precursor and 5% H2Reduction Gas (nl)
skos:prefLabel	Growth of RuO2Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4Precursor and 5% H2Reduction Gas (en) Growth of RuO2Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4Precursor and 5% H2Reduction Gas (nl)
name	Growth of RuO2Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4Precursor and 5% H2Reduction Gas (en) Growth of RuO2Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4Precursor and 5% H2Reduction Gas (nl)
author	wds:Q58886073-695A11FF-C9BE-4F45-BCD7-C508902BDA04 wds:Q58886073-8078F5A8-C93E-4B16-8C44-CE133087CDAD
author	Seong Keun Kim Cheol Seong Hwang
title	wds:Q58886073-00442298-7B61-4611-9311-B21AE0C5A2A7
title	Growth of RuO2Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4Precursor and 5% H2Reduction Gas (en)
page(s)	wds:Q58886073-5A62ACB3-4E4A-40D3-AD2C-4D8778E6AB92
page(s)	5700-5706
instance of	wds:Q58886073-0132EA33-FD01-4399-A0E8-82560C732DD4
instance of	scholarly article
published in	wds:Q58886073-F4201E9F-2F58-438D-9D4D-8284195565D8
published in	Chemistry of Materials
issue	wds:Q58886073-F21F7F7B-4777-4C87-8985-F692065055C4
volume	wds:Q58886073-13DF1F49-0F1B-4F53-A513-43D707F6627A
issue	20
volume	22
DOI	wds:Q58886073-86821755-B855-4A4E-9586-DDCC115D1445
DOI	http://dx.doi.org/10.1021/CM101694G
DOI	10.1021/CM101694G
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q58886073
is cites work of	Chemistry of active oxygen in RuOx and its influence on the atomic layer deposition of TiO2 films Ta-Doped SnO2 as a reduction–resistant oxide electrode for DRAM capacitors Control of conducting filaments in TiO2 films by a thin interfacial conducting oxide layer at the cathode
is cites work of	wds:Q58886009-50613E92-7B63-4E84-8D24-25BF1641BD96 wds:Q58885971-28166A06-3EE5-4B45-AABC-94D9E5E5D261 wds:Q58886036-32A9442F-F689-42E0-8163-63C046772E60

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