About: Contribution to the study of silicon / insulator interface faults in MOS transistors

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PhD thesis in electrical engineering

Attributes	Values
rdf:type	Item
description	أطروحة دكتوراه في الهندسة الكهربائية (ar) أطروحة دكتوراه في الهندسة الكهربائية (arq) PhD thesis in electrical engineering (en) Thèse de doctorat en génie électrique (fr) Tesis doctoral en microelectrónica (es) tesi doctoral d'enginyeria elèctrica (ca)
publication date	wds:Q106451718-41c6a20d-4f9d-483d-d4e1-504b7aa16082
publication date	2004-01-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q106451718-e13e8ea5-48cb-e997-3024-d88838f7dbfe
language of work or name	French
rdfs:label	Contribution to the study of silicon / insulator interface faults in MOS transistors (ca) Contribution to the study of silicon / insulator interface faults in MOS transistors (en) Contribution à l'étude des défauts de l'interface silicium/isolant dans les transistors MOS (fr) Contribución al estudio de fallas de interfaz silicio / aislante en transistores MOS avanzados (es) المساهمة في دراسة أعطال واجهة السليكون / العازل في ترانزستورات MOS المتقدمة (ar)
skos:prefLabel	Contribution to the study of silicon / insulator interface faults in MOS transistors (ca) Contribution to the study of silicon / insulator interface faults in MOS transistors (en) Contribution à l'étude des défauts de l'interface silicium/isolant dans les transistors MOS (fr) Contribución al estudio de fallas de interfaz silicio / aislante en transistores MOS avanzados (es) المساهمة في دراسة أعطال واجهة السليكون / العازل في ترانزستورات MOS المتقدمة (ar)
name	Contribution to the study of silicon / insulator interface faults in MOS transistors (ca) Contribution to the study of silicon / insulator interface faults in MOS transistors (en) Contribution à l'étude des défauts de l'interface silicium/isolant dans les transistors MOS (fr) Contribución al estudio de fallas de interfaz silicio / aislante en transistores MOS avanzados (es) المساهمة في دراسة أعطال واجهة السليكون / العازل في ترانزستورات MOS المتقدمة (ar)
author	wds:Q106451718-884862d3-49e5-9f00-d9d0-448dcc387b5a
author	Fayçal Rahmoune
title	wds:Q106451718-D4C93C99-BF43-4367-9945-061965DF1DB3
title	Contribution à l'étude des défauts de l'interface silicium/isolant dans les transistors MOS avancés (fr)
instance of	wds:Q106451718-4ef28438-42d0-fa65-52fd-1379d1189413 wds:Q106451718-EC558804-AD87-4DF3-9F13-3BA9F7103EE5 wds:Q106451718-a5b10583-4668-9f81-23f9-803ec8ef9e60 wds:Q106451718-dcf80549-4c1d-480a-3046-6839add6a01c
instance of	doctoral thesis thesis written work work of science
main subject	wds:Q106451718-01a81a26-42f6-ae40-bae6-54b5299e4ae4 wds:Q106451718-74D32A4C-3D43-4D33-862D-07ED6ECEAEB3 wds:Q106451718-8C291D46-DFCB-4408-A382-4A17E85844CC
main subject	microelectronics semiconductor optics
publisher	wds:Q106451718-40708AF1-26C4-4C2F-8C86-C415CF86BEA3 wds:Q106451718-65ac6a82-428a-3877-741a-54d972e6e09d
publisher	University of Grenoble Grenoble Institute of Technology
OCLC control number	wds:Q106451718-26fff0ce-473d-763c-17d5-a6b6a54ebf7e wds:Q106451718-404A7C30-6B99-4B7F-9010-AB135ACD0CC6
OCLC control number	http://www.worldcat.org/oclc/1164581250 http://www.worldcat.org/oclc/492765319
OCLC control number	1164581250 492765319
SUDOC editions	wds:Q106451718-56C13443-E88B-4579-9303-11BC4F97B61D wds:Q106451718-8A265E0C-4339-43E4-B320-D1AB48D442C6
SUDOC editions	http://www.sudoc.fr/084641711/id http://www.sudoc.fr/246790652/id
SUDOC editions	084641711 246790652
skos:altLabel	Contribution à l'étude des défauts de l'interface silicium/isolant dans les transistors MOS avancés (fr) Contribution to the study of silicon / insulator interface faults in advanced MOS transistors (ca) Contribution to the study of silicon / insulator interface faults in advanced MOS transistors (en)
National Thesis Number (France)	wds:Q106451718-dec1e5a7-456f-f69b-54aa-a41313d120de
National Thesis Number (France)	http://www.theses.fr/2004INPG0077/id
National Thesis Number (France)	2004INPG0077
is owl:sameAs of	Contribution to the study of silicon / insulator interface faults in MOS transistors
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q106451718
is academic thesis of	Fayçal Rahmoune
is academic thesis of	wds:Q106418343-82afee24-4c36-8fbf-f3fc-321b119de22b
is notable work of	Fayçal Rahmoune
is notable work of	wds:Q106418343-e77f9871-4a42-cce4-a784-ed92121ef9a0

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