About: Electron-energy-loss investigation of hole-plasmon excitation due to thermal indiffusion boron doping of Si(111) surfaces

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About: Electron-energy-loss investigation of hole-plasmon excitation due to thermal indiffusion boron doping of Si(111) surfaces Goto Sponge Distinct Permalink

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scientific article published on 01 December 1994

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description	article científic (ca) article scientific (oc) articol științific (ro) articolo scientifico (it) artigo científico (gl) artigo científico (pt) artigo científico (pt-br) artikull shkencor (sq) artikulong pang-agham (tl) artykuł naukowy (pl) artículu científicu (ast) bilimsel makale (tr) scienca artikolo (eo) teaduslik artikkel (et) tieteellinen artikkeli (fi) tudományos cikk (hu) vedecký článok (sk) vetenskaplig artikel (sv) vitenskapelig artikkel (nb) vitskapeleg artikkel (nn) vědecký článek (cs) wetenschappelijk artikel (nl) επιστημονικό άρθρο (el) научна статия (bg) научная статья (ru) научни чланак (sr) מאמר מדעי (he) სამეცნიერო სტატია (ka) บทความทางวิทยาศาสตร์ (th) artikel ilmiah (id) bài báo khoa học (vi) naučni članak (sr-el) мақолаи илмӣ (tg-cyrl) научни чланак (sr-ec) article scientifique (fr) 1994 nî lūn-bûn (nan) 1994年の論文 (ja) 1994년 논문 (ko) artículo científico publicado en 1994 (es) наукова стаття, опублікована в грудні 1994 (uk) 1994年学术文章 (zh-cn) 1994年学术文章 (zh-sg) 1994年学术文章 (zh-hans) 1994年学术文章 (wuu) 1994年学术文章 (zh-my) 1994年學術文章 (zh-hk) 1994年學術文章 (zh-tw) 1994年學術文章 (zh-hant) 1994年學術文章 (yue) 1994年學術文章 (zh-mo) scientific article published in December 1994 (en-ca) scientific article published in December 1994 (en-gb) im Dezember 1994 veröffentlichter wissenschaftlicher Artikel (de) 1994年学术文章 (zh) videnskabelig artikel udgivet december 1994 (da) مقالة علمية نشرت في ديسمبر 1994 (ar) ডিসেম্বর ১৯৯৪-এ প্রকাশিত বৈজ্ঞানিক নিবন্ধ (bn) scientific article published on 01 December 1994 (en)
publication date	wds:Q78118711-96F2D5E5-0DB1-4706-9983-A5EE1162C2F2
publication date	1994-12-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q78118711-92F625FD-315A-4460-B9B3-532428B16BE6
language of work or name	English
cites work	wds:Q78118711-07A04DE6-53BE-4514-BF40-31E9F349367B wds:Q78118711-13A29E54-CA0F-407C-8625-1445DCA2A2DC wds:Q78118711-160357E0-5A8F-4B38-894A-9E1187DBC4D1 wds:Q78118711-1C584D3D-A20E-4360-A7F5-3FB2C5AF220D wds:Q78118711-50C17DB1-636A-4667-8C66-1097A5568E17 wds:Q78118711-8C128665-48A3-4ADC-A61C-642850094C5C wds:Q78118711-9B6F301D-24BC-4D62-BF5E-894EA0634EB0 wds:Q78118711-A3362687-9A90-4FD9-A67B-783F692091B5 wds:Q78118711-ABC27641-A689-48DC-8B16-6F5F1D617A99 wds:Q78118711-EA259506-AEBC-4045-8B94-FA64D58F861A wds:Q78118711-F105928A-ABC6-4F3D-8C4B-D9427C4D2A1C wds:Q78118711-F377BF7B-8D4D-41E5-BE73-EA7E9D365A24
cites work	Surface doping and stabilization of Si(111) with boron. Structure determination of the Si(111):B( sqrt 3 x sqrt 3)R30 degrees surface: Subsurface substitutional doping Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction Electron-energy-loss study of the space-charge region at semiconductor surfaces Coupled plasmon and phonon excitations in the space-charge layer on GaAs(110) surfaces Electronic states due to surface doping: Si(111) sqrt 3 x sqrt 3B Long-range quasielastic scattering of low-energy electrons by conduction-band surface plasmons on Si(111)7 x 7 Surface states and alkali-to-semiconductor charge transfer in the K/Si(111)( sqrt 3 x sqrt 3 )R(30 degrees )-B system Hole plasmon excitations on a p-type GaAs(110) surface Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs(110) surfaces Surface plasmons on n-type semiconductors: Influence of depletion and accumulation layers Surface-plasmon dispersion relation on n-type GaAs: A comparison of local and nonlocal response
author name string	wds:Q78118711-05CBF5F9-C2D8-449B-805D-233F9936D1E4 wds:Q78118711-734871A3-E9D3-4EC3-9E11-9027C9631DFD wds:Q78118711-EC91D2A1-B040-4B5B-8E5C-F7F618F8B674
author name string	Chen PJ Yates JT Jr Rowe JE
rdfs:label	Electron-energy-loss investigation of hole-plasmon excitation due to thermal indiffusion boron doping of Si(111) surfaces (en) Electron-energy-loss investigation of hole-plasmon excitation due to thermal indiffusion boron doping of Si(111) surfaces (nl)
skos:prefLabel	Electron-energy-loss investigation of hole-plasmon excitation due to thermal indiffusion boron doping of Si(111) surfaces (en) Electron-energy-loss investigation of hole-plasmon excitation due to thermal indiffusion boron doping of Si(111) surfaces (nl)
name	Electron-energy-loss investigation of hole-plasmon excitation due to thermal indiffusion boron doping of Si(111) surfaces (en) Electron-energy-loss investigation of hole-plasmon excitation due to thermal indiffusion boron doping of Si(111) surfaces (nl)
title	wds:Q78118711-3461BB9A-7818-48A3-8F52-1EE2DFCFBDFC

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