About: Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs(110) surfaces

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About: Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs(110) surfaces Goto Sponge NotDistinct Permalink

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scientific article published on 01 January 1992

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в січні 1992 (uk) im Januar 1992 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en xineru de 1992 (ast) artikull shkencor i botuar më 01 janar 1992 (sq) scientific article published on 01 January 1992 (en)
publication date	wds:Q74358307-541352F3-A7A9-4217-BD0C-07279E88ACA7
publication date	1992-01-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74358307-4D0DCC2C-CE0E-4266-84FB-85C43834F219
language of work or name	English
cites work	wds:Q74358307-3B0B576F-AADA-4BE5-8B5B-DBC2D22DB603 wds:Q74358307-5A4A8537-1E47-4B3C-8F3F-9202E4242AC5 wds:Q74358307-5E0B940E-29B7-48D9-A7A7-EB11ADA2FDCE wds:Q74358307-6B12FC61-D967-4BF5-B68A-E2646ADAED6A wds:Q74358307-B4BABFC4-FF30-4F5F-961A-7324111F21CE wds:Q74358307-BDB2A496-9F18-464F-8219-FD527B38D2A8 wds:Q74358307-C3AD6F6E-2537-475D-9821-9B7ED49602AA wds:Q74358307-C490D9EC-39F1-4537-941A-CEE62E2B03DC wds:Q74358307-FFC04F63-2506-43FF-BC2B-E85C2A5F78FF
cites work	Surface and interface phonon and plasmon excitations in iii-v semiconductor materials Electron-energy-loss study of the space-charge region at semiconductor surfaces Coupled plasmon and phonon excitations in the space-charge layer on GaAs(110) surfaces Electron-energy-loss spectroscopy of multilayered materials: Theoretical aspects and study of interface optical phonons in semiconductor superlattices Hole plasmon excitations on a p-type GaAs(110) surface Coupled plasmon and phonon in the accumulation layer of InAs(110) cleaved surfaces Self-consistent calculations of depletion- and accumulation-layer profiles in n-type GaAs Surface plasmons on n-type semiconductors: Influence of depletion and accumulation layers Influence of surface charge on free-carrier density profiles in GaAs films: Application to second-harmonic generation by free carriers
author name string	wds:Q74358307-5E66F65A-A886-487F-9A29-01F3E4F390E4 wds:Q74358307-9C9B7ED3-8AA4-4CD8-95E4-5D401DE22F0D
author name string	Meng Y Lapeyre GJ
rdfs:label	Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs(110) surfaces (en) Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs(110) surfaces (sq) Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs (nl)
skos:prefLabel	Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs(110) surfaces (en) Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs(110) surfaces (sq) Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs (nl)
name	Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs(110) surfaces (en) Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs(110) surfaces (sq) Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs (nl)
title	wds:Q74358307-14705F07-D9E2-4F22-9125-C8BDB7A4C59C
title	Temperature dependence of high-resolution electron-energy-loss spectroscopy of the hole plasmon at heavily doped p-type GaAs(110) surfaces (en)
page(s)	wds:Q74358307-85C9C1CA-902B-4669-A1B6-A3ECA6F38C07
page(s)	1500-1503
instance of	wds:Q74358307-103C5A7E-444C-402D-8A41-E72DBFC169CF
instance of	scholarly article
PubMed ID	wds:Q74358307-FD3B617D-FB35-4971-B3EC-2222A572621F
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10001642
PubMed ID	10001642
published in	wds:Q74358307-C536CCA6-D0EB-41FC-974E-3F61A9406C1C
published in	Physical Review B
issue	wds:Q74358307-5520388F-CB12-4C4D-8C67-9CB2AB262D90
volume	wds:Q74358307-15EAA2B2-4755-4ECB-985B-DB208BACD0A0
issue	3
volume	45
number of pages	wds:Q74358307-F10A66D6-20A3-48AE-99D4-8E2FA4F10F18
number of pages	4 (xsd:decimal)
DOI	wds:Q74358307-A7CE3F16-4616-4C8A-A122-F0CB38239CB2
DOI	http://dx.doi.org/10.1103/PHYSREVB.45.1500
DOI	10.1103/PHYSREVB.45.1500
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74358307
is cites work of	Depletion layers, plasmon dispersion, and the effects of temperature in degenerate InSb(100): A study by electron-energy-loss spectroscopy Electron-energy-loss investigation of hole-plasmon excitation due to thermal indiffusion boron doping of Si(111) surfaces
is cites work of	wds:Q78128414-9AF97FBA-5477-4877-B009-2654B536D814 wds:Q78118711-F377BF7B-8D4D-41E5-BE73-EA7E9D365A24

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