About: Why nitrogen cannot lead to p-type conductivity in ZnO

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scholarly article by J. L. Lyons et al published 21 December 2009 in Applied Physics Letters

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) article scientifique publié en 2009 (fr) наукова стаття, опублікована в грудні 2009 (uk) im Dezember 2009 veröffentlichter wissenschaftlicher Artikel (de) scholarly article by J. L. Lyons et al published 21 December 2009 in Applied Physics Letters (en)
publication date	wds:Q56424049-E6B7D2FE-6F00-4855-8A91-5A4836E83BAD
publication date	2009-12-21 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q56424049-F01948BA-3E7C-42BD-BC1D-CE5E5B337EC4
language of work or name	English
cites work	wds:Q56424049-0D9C216A-679A-4EAB-B699-17477E93824E wds:Q56424049-30008BF7-B95E-4432-B8D5-162B45029325 wds:Q56424049-55B40D91-EEB1-41BE-BC51-9EB0EBD56043 wds:Q56424049-598E921A-9DA8-4D67-A351-BDF7BF9505C9 wds:Q56424049-6B4A9FBC-96E5-404A-8CC1-C7C97233EA2F wds:Q56424049-7096B528-2F16-4570-8555-2C703234DACF wds:Q56424049-D5196D26-BFBE-41BB-98C3-946D58897FB1 wds:Q56424049-D58767B5-B953-456A-9A1B-407B5D2816F0 wds:Q56424049-E58B4D3C-EA69-42F7-BD13-622918A6EC89 wds:Q56424049-FB69C6C5-1868-4167-8FBF-69D2D93B80E9
cites work	Generalized Gradient Approximation Made Simple From ultrasoft pseudopotentials to the projector augmented-wave method Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Fundamentals of zinc oxide as a semiconductor A comprehensive review of ZnO materials and devices Recent advances in ZnO materials and devices Causes of incorrect carrier-type identification in van der Pauw–Hall measurements Hydrogen passivation effect in nitrogen-doped ZnO thin films First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe Role of Si and Ge as impurities in ZnO
author name string	wds:Q56424049-56A1E91E-7164-449F-BC53-554F73F9DD81 wds:Q56424049-E2D57AA6-70BB-4DEB-A0F8-30E5A0A1514C
author name string	C. G. Van de Walle J. L. Lyons
rdfs:label	Why nitrogen cannot lead to p-type conductivity in ZnO (en) Why nitrogen cannot lead to p-type conductivity in ZnO (nl)
skos:prefLabel	Why nitrogen cannot lead to p-type conductivity in ZnO (en) Why nitrogen cannot lead to p-type conductivity in ZnO (nl)
name	Why nitrogen cannot lead to p-type conductivity in ZnO (en) Why nitrogen cannot lead to p-type conductivity in ZnO (nl)
author	wds:Q56424049-4C7A6575-84B0-43CC-8589-9694BE39240A
author	Anderson Janotti
title	wds:Q56424049-0823731B-EF45-4DEE-9A9F-2C3FE3A1E83B
title	Why nitrogen cannot lead to p-type conductivity in ZnO (en)
page(s)	wds:Q56424049-B7558549-05C4-4ECB-A21D-CE68DEDC6072
page(s)	252105
instance of	wds:Q56424049-6402B2C6-E520-4795-B638-650FD093C7CE
instance of	scholarly article
main subject	wds:Q56424049-4911CE1E-F296-4D3A-AE91-BD1162A9B502 wds:Q56424049-EEEA2BD7-7D9A-485F-8E27-FE3BF5AD1474
main subject	lead nitrogen radical
published in	wds:Q56424049-33439858-08C1-4DBC-933F-442A9916B582
published in	Applied Physics Letters
issue	wds:Q56424049-0FE796B5-AFBA-4CD3-9FD8-AFAF7637708D
volume	wds:Q56424049-EDB05556-B14E-43E4-9C7D-93C1F14F712E
issue	25
volume	95
DOI	wds:Q56424049-3B654F1B-6DD1-499D-8E91-0175898131B3
DOI	http://dx.doi.org/10.1063/1.3274043
DOI	10.1063/1.3274043
ResearchGate publication ID	wds:Q56424049-E8099850-7854-4B11-877A-B9EE191F3662
ResearchGate publication ID	202846193
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q56424049
is cites work of	Dangling bonds and vacancies in germanium Group-V impurities inSnO2from first-principles calculations Efficient nitrogen incorporation in ZnO nanowires The effect of sulfur on the electrical properties of S and N co-doped ZnO thin films: experiment and first-principles calculations. First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO Limits to doping in oxides Mechanism of visible-light photocatalysis in nitrogen-doped TiO₂. Nitrogen defects in wide band gap oxides: defect equilibria and electronic structure from first principles calculations Tutorial: Defects in semiconductors—Combining experiment and theory First-principles characterization of native-defect-related optical transitions in ZnO Alternative sources of p-type conduction in acceptor-doped ZnO Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance Concurrent synthetic control of dopant (nitrogen) and defect complexes to realize broadband (UV–650 nm) absorption in ZnO nanorods for superior photo-electrochemical performance Bistability of hydrogen in ZnO: origin of doping limit and persistent photoconductivity Property database for single-element doping in ZnO obtained by automated first-principles calculations Transition levels of defect centers in ZnO by hybrid functionals and localized basis set approach Instilling defect tolerance in new compounds. Acceptor doping in the proton conductor SrZrO3. Unravelling the origin of the giant Zn deficiency in wurtzite type ZnO nanoparticles Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment Incorporation of nitrogen in Co:ZnO studied by x-ray absorption spectroscopy and x-ray linear dichroism Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors Deep donor state of the copper acceptor as a source of green luminescence in ZnO Progress in ZnO Acceptor Doping: What Is the Best Strategy? The photoactive nitrogen impurity in nitrogen-doped zirconium titanate (N-ZrTiO4): a combined electron paramagnetic resonance and density functional theory study The Luminescent Inhomogeneity and the Distribution of Zinc Vacancy-Related Acceptor-Like Defects in N-Doped ZnO Microrods Correlation between electrical properties and point defects in NiO thin films Advances in electronic structure methods for defects and impurities in solids Optical Properties of ZnO-Alloyed Nanocrystalline Films Interdiffusion at the BaCuSeF/ZnTe interface Stability of non-metal dopants to tune the photo-absorption of TiO2 at realistic temperatures and oxygen partial pressures: A hybrid DFT study Critical increase in Na-doping facilitates acceptor band movements that yields ~180 meV shallow hole conduction in ZnO bulk crystals Comparison of density functionals for nitrogen impurities in ZnO. ZnO Doping and Defect Engineering—A Review Imposed layer-by-layer growth of ZnO on GaN/sapphire substrates using pulsed laser interval deposition
is cites work of	wds:Q56422750-050D1D66-4B03-4509-9C52-8EBD1F24EBA1

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