About: Hydrogen passivation effect in nitrogen-doped ZnO thin films

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rdf:type	Item
description	wetenschappelijk artikel (nl) article scientifique publié en 2005 (fr) наукова стаття, опублікована в березні 2005 (uk) im März 2005 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q56424308-C692287E-6C33-41FE-BFF2-5ED3ACE26FF9
publication date	2005-03-21 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q56424308-1AC62204-8541-43EF-8129-502C27728E06
language of work or name	English
cites work	wds:Q56424308-097147FF-727C-4184-B00B-CE895A6E4DC8 wds:Q56424308-14F226BD-CC83-45A7-9E76-50D511891CD7 wds:Q56424308-854A2957-2D74-4771-9E89-3C17B2D7D356 wds:Q56424308-937A17D3-3FF7-4FD5-A9A0-7E8C8AA75B4E wds:Q56424308-B666C506-E438-499B-B467-38DC169F6E13 wds:Q56424308-E3E02C6B-738C-4449-BA69-6A57A0E030F3
cites work	Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Hydrogen as a Cause of Doping in Zinc Oxide Recent advances in ZnO materials and devices Doping by large-size-mismatched impurities: the microscopic origin of arsenic- or antimony-doped p-type zinc oxide. Identification of hydrogen configurations inp-type GaN through first-principles calculations of vibrational frequencies Hydrogen-related defects in ZnO studied by infrared absorption spectroscopy
author name string	wds:Q56424308-0C71FF34-E23D-434E-B628-D7D7755E9F2A wds:Q56424308-62C97127-8BC5-4236-B995-92B64177A9E8 wds:Q56424308-6D09A42E-DE61-44C3-88AF-841D48479B68 wds:Q56424308-872AC968-033B-49B1-B8DA-2953C4035D4F wds:Q56424308-E7A86E7F-78E0-499F-BE37-DD2EFF2B0447
author name string	Sukit Limpijumnong Xiaonan Li Brian Keyes Sally Asher Timothy J. Coutts
rdfs:label	Hydrogen passivation effect in nitrogen-doped ZnO thin films (en) Hydrogen passivation effect in nitrogen-doped ZnO thin films (nl)
skos:prefLabel	Hydrogen passivation effect in nitrogen-doped ZnO thin films (en) Hydrogen passivation effect in nitrogen-doped ZnO thin films (nl)
name	Hydrogen passivation effect in nitrogen-doped ZnO thin films (en) Hydrogen passivation effect in nitrogen-doped ZnO thin films (nl)
author	wds:Q56424308-3A627680-1EF5-450D-ADF2-8EA2BF5679D8 wds:Q56424308-5DD777AC-04C0-493B-BE15-231ACDBAEB93 wds:Q56424308-97269A54-11BE-4621-954C-F82315ED7969
author	Chris G. Van de Walle Su-Huai Wei Shengbai Zhang
title	wds:Q56424308-905B887E-489F-4D83-A5AC-9A6695657014
title	Hydrogen passivation effect in nitrogen-doped ZnO thin films (en)
page(s)	wds:Q56424308-51073071-5730-418E-AA7E-9DA653CEA72C
page(s)	122107
instance of	wds:Q56424308-3FFE5655-2C37-471D-96B9-C7557C55A7FD
instance of	scholarly article
main subject	wds:Q56424308-A2846E78-8155-4687-A28D-E44178904F7D
main subject	thin film
published in	wds:Q56424308-250A8FDD-1A35-4F3F-8DEA-D03B07E0EC3C
published in	Applied Physics Letters
issue	wds:Q56424308-2F834031-25AA-42A4-83FA-EEF622E8529F
volume	wds:Q56424308-01F4BD59-8BA9-4E26-AAE7-9DF5D375B283
issue	12
volume	86
DOI	wds:Q56424308-1C5331F9-570F-4AE1-8F76-7438ED695332
DOI	http://dx.doi.org/10.1063/1.1886256
DOI	10.1063/1.1886256
Fatcat ID	wds:Q56424308-E9108F43-5C44-4388-B9B1-0DE530D5C7B0
Fatcat ID	release_hvvgamkganeqbkb7wtw5bvhp5m
ResearchGate publication ID	wds:Q56424308-A0050F9F-DFB0-4E53-AEF9-22412757AA1B
ResearchGate publication ID	224428226
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q56424308
is cites work of	Nitrogen defects in wide band gap oxides: defect equilibria and electronic structure from first principles calculations Why nitrogen cannot lead to p-type conductivity in ZnO Carbon-nitrogen molecules in GaAs and GaP Nitrogen defects from NH3in rare-earth sesquioxides and ZrO2 Attracting shallow donors: Hydrogen passivation in (Al,Ga,In)-doped ZnO
is cites work of	wds:Q56424049-6B4A9FBC-96E5-404A-8CC1-C7C97233EA2F wds:Q56424062-F051915E-36EC-424C-8BCC-5EA0A2E8CA83 wds:Q58200386-F4BD9AB7-D7A8-424E-8335-7F11242C956F wds:Q58833908-00DAD45A-51FF-46ED-8A15-F7D87917DB67 wds:Q58200412-0D5E88CC-0417-4BAF-AFA4-1B04859E2630

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