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Statements

Subject Item

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scientific article published on 01 January 1993 наукова стаття, опублікована в січні 1993 im Januar 1993 veröffentlichter wissenschaftlicher Artikel bài báo khoa học wetenschappelijk artikel artikull shkencor i botuar më 01 janar 1993 artículu científicu espublizáu en xineru de 1993

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1993-01-01T00:00:00Z

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Williams GP Jr Liu H Rowe MW Williams RT

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Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces

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Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces

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Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces

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wds:Q74381746-9F55C706-C730-456C-A359-BD2E187F69C8

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Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces

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wds:Q74381746-4ACAC20A-C06D-41A3-8358-3EDC4FB8064A

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2048-2064

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n9:PHYSREVB.47.2048

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10.1103/PHYSREVB.47.2048