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im August 1997 veröffentlichter wissenschaftlicher Artikel scholarly article by C. Hallin et al published August 1997 in Diamond and Related Materials article scientifique publié en 1997 wetenschappelijk artikel наукова стаття, опублікована в серпні 1997
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1997-08-01T00:00:00Z
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A.O. Konstantinov B. Pécz C. Hallin
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The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition
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The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition
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The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition
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The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition
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