This HTML5 document contains 43 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
wdthttp://www.wikidata.org/prop/direct/
wdtnhttp://www.wikidata.org/prop/direct-normalized/
n10http://dx.doi.org/10.1016/
schemahttp://schema.org/
rdfshttp://www.w3.org/2000/01/rdf-schema#
skoshttp://www.w3.org/2004/02/skos/core#
wikibasehttp://wikiba.se/ontology#
phttp://www.wikidata.org/prop/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
xsdhhttp://www.w3.org/2001/XMLSchema#
wdshttp://www.wikidata.org/entity/statement/
wdhttp://www.wikidata.org/entity/

Statements

Subject Item
wd:Q61815838
rdf:type
wikibase:Item
schema:description
наукова стаття, опублікована у квітні 2015 article scientifique publié en 2015 wetenschappelijk artikel
p:P577
wds:Q61815838-6C36ED4A-7C70-4DF9-B4F1-51240E64610C
wdt:P577
2015-04-01T00:00:00Z
p:P2093
wds:Q61815838-6901CCCA-2542-4087-B725-41987E5B3D62 wds:Q61815838-CD44F690-CC1D-491B-853D-3756754B7022 wds:Q61815838-D8178417-1FA0-419A-978B-7F9CE51EC0B9 wds:Q61815838-C2D56AAA-5B3F-4E2B-8F1F-D109AAD8F6F6 wds:Q61815838-5AA61079-4485-416D-A409-B430AABD3859 wds:Q61815838-683C6BD4-1561-4780-9CA4-A401AD166879 wds:Q61815838-4EBF08AD-30E1-47D5-8B9A-3378FE679E78
wdt:P2093
Ken-ichi Shiohama Ryuichi Hasegawa Yaxin Wang Kaori Kurihara Tomohiro Yamamoto Hideki Hayashi Rika Shimma
rdfs:label
The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE
skos:prefLabel
The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE
schema:name
The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE
p:P50
wds:Q61815838-C973AD9F-47F7-4AEA-8F61-4BDFD3258D3F
wdt:P50
wd:Q60531542
p:P1476
wds:Q61815838-FB96A198-A4F6-4C73-B4F6-5A3D9A2592AA
wdt:P1476
The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE
p:P304
wds:Q61815838-A23A9D44-BB1A-40B7-9A5D-26EE1C520171
wdt:P304
164-168
p:P31
wds:Q61815838-FDD20C92-F378-4376-9F44-6FC29A69EE1F
wdt:P31
wd:Q13442814
p:P921
wds:Q61815838-33A9686B-3AF6-41D8-8C25-3CE50F3F91C9
wdt:P921
wd:Q214781
p:P1433
wds:Q61815838-E89F4002-CCB5-4EE7-9EF1-57AADA5EE6DB
wdt:P1433
wd:Q1929756
p:P478
wds:Q61815838-368DBEC3-BBF7-4D3C-8905-9132D9B9DF0F
wdt:P478
416
p:P356
wds:Q61815838-9D6DFCEE-366C-4BB7-B045-924A0EC78AB6
wdtn:P356
n10:J.JCRYSGRO.2015.01.028
wdt:P356
10.1016/J.JCRYSGRO.2015.01.028