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наукова стаття, опублікована в січні 2007 article scientifique publié en 2007 im Januar 2007 veröffentlichter wissenschaftlicher Artikel wetenschappelijk artikel scholarly article in Physical Review B, vol. 75 no. 4, January 2007
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2007-01-24T00:00:00Z
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I. M. Ross J. Zhang N. Q. Vinh D. J. Paul Marco Califano A. G. Cullis C. R. Pidgeon P. J. Phillips
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Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness
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Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness
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Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness
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Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness
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10.1103/PHYSREVB.75.045338