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wetenschappelijk artikel article scientifique publié en 2012 im Januar 2012 veröffentlichter wissenschaftlicher Artikel 2012 ജനുവരി 17 നു പ്രസിദ്ധീകരിച്ച ശാസ്ത്ര ലേഖനം наукова стаття, опублікована в січні 2012 scholarly article in Physical Review B, vol. 85 no. 3, January 2012
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2012-01-17T00:00:00Z
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J. D. Lee S. W. Han Soon Cheol Hong In Gee Kim
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Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
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Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
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Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
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Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
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10.1103/PHYSREVB.85.033305
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