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2015年學術文章 სამეცნიერო სტატია vitskapeleg artikkel teaduslik artikkel article scientific artigo científico научни чланак επιστημονικό άρθρο ২২ জুন ২০১৫-এ প্রকাশিত বৈজ্ঞানিক নিবন্ধ scientific article published on 22 June 2015 artikull shkencor 2015年学术文章 artykuł naukowy 2015年学术文章 2015 nî lūn-bûn article scientifique scientific article published on 22 June 2015 bài báo khoa học บทความทางวิทยาศาสตร์ artículo científico publicado en 2015 2015年學術文章 articolo scientifico scienca artikolo artigo científico مقالة علمية نشرت في 22 يونيو 2015 научная статья artikel ilmiah 2015年学术文章 naučni članak 2015年學術文章 2015年學術文章 bilimsel makale vedecký článok wissenschaftlicher Artikel 2015年学术文章 artikulong pang-agham научни чланак tieteellinen artikkeli tudományos cikk наукова стаття, опублікована в червні 2015 2015年學術文章 2015년 논문 articol științific 2015年学术文章 vitenskapelig artikkel article científic artículu científicu vetenskaplig artikel 2015年の論文 wetenschappelijk artikel 2015年学术文章 мақолаи илмӣ vědecký článek scientific article published on 22 June 2015 מאמר מדעי artigo científico научна статия videnskabelig artikel
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Fan Ye Chul-Ho Lee Xu Cui
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Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
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Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
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Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
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Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
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