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teaduslik artikkel artigo científico article scientifique 1990 nî lūn-bûn vetenskaplig artikel vitenskapelig artikkel artigo científico 1990年學術文章 1990年学术文章 videnskabelig artikel naučni članak artykuł naukowy artikull shkencor wetenschappelijk artikel bilimsel makale artikel ilmiah 1990년 논문 научна статия 1990年学术文章 مقالة علمية نشرت في نوفمبر 1990 vitskapeleg artikkel 1990年學術文章 artigo científico 1990年学术文章 articolo scientifico 1990年學術文章 artículo científico publicado en 1990 мақолаи илмӣ სამეცნიერო სტატია מאמר מדעי vědecký článek 1990年学术文章 1990年學術文章 scientific article published in November 1990 научни чланак artikulong pang-agham επιστημονικό άρθρο 1990年学术文章 নভেম্বর ১৯৯০-এ প্রকাশিত বৈজ্ঞানিক নিবন্ধ научная статья บทความทางวิทยาศาสตร์ scientific article published in November 1990 1990年学术文章 article científic գիտական հոդված հրատարակված 1990 թվականի նոյեմբերին 1990年の論文 bài báo khoa học tieteellinen artikkeli научни чланак vedecký článok 1990年學術文章 article scientific tudományos cikk articol științific scientific article published in November 1990 wissenschaftlicher Artikel artículu científicu scienca artikolo наукова стаття, опублікована в листопаді 1990
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Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces. Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si
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Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces. Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si
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Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces. Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si
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Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces.
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