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мақолаи илмӣ scientific article published on 14 April 2014 artikulong pang-agham научная статья 2014年论文 vitenskapelig artikkel bài báo khoa học teaduslik artikkel tudományos cikk articolo scientifico სამეცნიერო სტატია artikel ilmiah scienca artikolo מאמר מדעי artigo científico tieteellinen artikkeli 2014年论文 wissenschaftlicher Artikel ১৪ এপ্রিল ২০১৪-এ প্রকাশিত বৈজ্ঞানিক নিবন্ধ 2014年论文 2014年の論文 наукова стаття, опублікована у квітні 2014 2014年論文 bilimsel makale научни чланак vedecký článok artigo científico επιστημονικό άρθρο scientific article published on 14 April 2014 2014年论文 article scientifique artykuł naukowy artículo científico publicado en 2014 article científic article scientific 2014年論文 2014年论文 artikull shkencor научна статия articol științific wetenschappelijk artikel مقالة علمية نشرت في 14 أبريل 2014 2014年論文 2014년 논문 บทความทางวิทยาศาสตร์ vědecký článek vitskapeleg artikkel artigo científico scientific article published on 14 April 2014 научни чланак 2014年论文 2014 nî lūn-bûn vetenskaplig artikel videnskabelig artikel artículu científicu espublizáu en 2014 2014年論文 naučni članak 2014年論文
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Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer.
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Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer.
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Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer. Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer.
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