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наукова стаття, опублікована в травні 2014 2014年論文 scientific article artículo científico publicado en 2014 artikulong pang-agham mokslinis straipsnis vědecký článek teaduslik artikkel vetenskaplig artikel مقالة علمية article científic научная статья 2014년 논문 мақолаи илмӣ 2014年论文 บทความทางวิทยาศาสตร์ artigo científico (publicado na 2014) мақолаи илмӣ artykuł naukowy 2014年論文 2014年论文 2014年論文 artikull shkencor naučni članak научни чланак 2014年の論文 scienca artikolo научни чланак ২০১৪-এ প্রকাশিত বৈজ্ঞানিক নিবন্ধ artigo científico 2014年论文 научна статия articol științific სამეცნიერო სტატია bài báo khoa học videnskabelig artikel (udgivet 2014) vitenskapelig artikkel 2014年论文 article scientifique (publié 2014) bilimsel makale wissenschaftlicher Artikel مقالهٔ علمی vedecký článok מאמר מדעי 2014年論文 2014年論文 επιστημονικό άρθρο artículu científicu espublizáu en 2014 سائنسی مضمون 2014 թուականի Մայիսին հրատարակուած գիտական յօդուած 2014 nî lūn-bûn wetenschappelijk artikel vitskapeleg artikkel 2014年论文 artigo científico (publicado na 2014) tieteellinen artikkeli article scientific articolo scientifico 2014 թվականի մայիսին հրատարակված գիտական հոդված tudományos cikk 2014年论文

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2014-05-01T00:00:00Z

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Yuriy I Mazur Qi Jiang Vitaliy G Dorogan Mingchu Tang Gregory J Salamo Huiyun Liu Siming Chen

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1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.

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1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.

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1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.

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1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers

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10.1364/OE.22.011528