About: Band gap engineering of chemical vapor deposited graphene by in situ BN doping

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scientific article published on 04 January 2013

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в січні 2013 (uk) article scientifique publié en 2013 (fr) im Januar 2013 veröffentlichter wissenschaftlicher Artikel (de) scientific article published on 04 January 2013 (en) artículu científicu espublizáu en xineru de 2013 (ast)
publication date	wds:Q85804643-ED04BA52-D83B-4F58-B5BA-3EB44A222FB9
publication date	2013-01-04 00:00:00Z (xsd:dateTime)
author name string	wds:Q85804643-102159F5-D4F0-4736-B6FA-6E36AE80A30C wds:Q85804643-1F27FCE9-0CE1-4DBF-8115-9FFC5D3898E3 wds:Q85804643-2DEA1E58-C811-406B-9C29-59935B03EFE1 wds:Q85804643-2E75C940-263C-4E52-BEE8-007A11156E14 wds:Q85804643-3D1D0B8A-AA41-4CAD-9334-E1A7EED11076 wds:Q85804643-570266D7-69D5-4602-9342-8BAB1FDA4C6E wds:Q85804643-5FE517FA-3F1F-4DBA-888C-99F61821C76D wds:Q85804643-663D3706-93AA-4AFC-BACA-45A94D650925 wds:Q85804643-897B97CD-7459-4F45-8044-FD061FD30AD8 wds:Q85804643-8A9118EA-92CF-4B9B-8416-0B5D3D2D58FB wds:Q85804643-8C35F0A1-0230-4920-92BE-D1EF67459EA7 wds:Q85804643-8EE53320-AB52-4F77-B848-153732F66F52 wds:Q85804643-9B85C976-0DBE-42F6-BE93-C9A5BA6B8217 wds:Q85804643-A6478B2A-D816-498E-9DFA-3B2CB0CB5BC3 wds:Q85804643-A8CCBBF2-9875-4DAD-872C-2D3D5E9E2791 wds:Q85804643-B1E16AB9-7C87-42EE-A37C-1CB9A058FBFD wds:Q85804643-B2142DE4-363B-4DDB-AD61-88524E52F53A wds:Q85804643-BA9A3BF2-7F9F-4DEF-8B1C-56E72963D582 wds:Q85804643-C9C2307A-A408-4D1B-98C3-FC22E4CEB9C4 wds:Q85804643-D1281DC0-1FC5-4BA0-9C81-A842F997C38F wds:Q85804643-ECE2D5BA-CA2C-484A-A428-4D2BF1183E2B
author name string	Masahiko Tsujimoto Cheng-Hao Chuang Way-Faung Pong Kuei-Hsien Chen Li-Chyong Chen Ching-I Huang Chun-Wei Chen Wei-Hsun Yang Yian Tai Abhijit Ganguly Sheng-Bo Wang Mi Chen Shoou-Jinn Chang Seiji Isoda Cheng-Kai Chang Jeong-Yuan Hwang Jing-Hua Guo Chun-Chiang Kuo Bo-Yao Wang Kay-Jay Huang Ker-Jar Song
rdfs:label	Band gap engineering of chemical vapor deposited graphene by in situ BN doping (en) Band gap engineering of chemical vapor deposited graphene by in situ BN doping (nl)
skos:prefLabel	Band gap engineering of chemical vapor deposited graphene by in situ BN doping (en) Band gap engineering of chemical vapor deposited graphene by in situ BN doping (nl)
name	Band gap engineering of chemical vapor deposited graphene by in situ BN doping (en) Band gap engineering of chemical vapor deposited graphene by in situ BN doping (nl)
author	wds:Q85804643-8EA70E0F-BCA4-481D-880A-E7503D3FB11F
author	S. Kataria
title	wds:Q85804643-461E6320-99DF-41E7-9D5D-17BF57B2D2BC
title	Band gap engineering of chemical vapor deposited graphene by in situ BN doping (en)
page(s)	wds:Q85804643-36C48925-631E-4F94-B2FF-AE71638665E7
page(s)	1333-1341
instance of	wds:Q85804643-DBEC9E19-A9DC-47E4-ADD7-63197E183019
instance of	scholarly article
main subject	wds:Q85804643-83A034FE-8E1B-4DAC-BBCC-6C0F7BC766DC
main subject	graphene
PubMed ID	wds:Q85804643-0B41A9C4-8033-4F90-A0F4-23909A6F1140
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/23273110
PubMed ID	23273110
published in	wds:Q85804643-183CD2B2-FA2E-4EA6-BE24-EEDB1516EA8C
published in	ACS Nano
issue	wds:Q85804643-4E01FC26-B57C-4548-9DBA-F274D2AD5342
volume	wds:Q85804643-47663715-3422-4170-B79C-9BB35B30F32D
issue	2
volume	7
DOI	wds:Q85804643-F1700DC6-F580-4D05-BE7F-0E280B6A80DB
DOI	http://dx.doi.org/10.1021/NN3049158
DOI	10.1021/NN3049158
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q85804643
is cites work of	Chemical Modification of Graphene Oxide by Nitrogenation: An X-ray Absorption and Emission Spectroscopy Study The effect of thermal reduction on the photoluminescence and electronic structures of graphene oxides. Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers. Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques Self-assembly of ordered graphene nanodot arrays N-Doped graphene/C60 covalent hybrid as a new material for energy harvesting applications Structure of graphene and its disorders: a review Sublattice asymmetry of impurity doping in graphene: A review Seamless lateral graphene p-n junctions formed by selective in situ doping for high-performance photodetectors Modified tailoring the electronic phase and emergence of midstates in impurity-imbrued armchair graphene nanoribbons Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons. Progress in Nonmetal-Doped Graphene Electrocatalysts for the Oxygen Reduction Reaction
is cites work of	wds:Q28817042-CF32FA27-7A90-4E7E-9847-E36365EADC1A wds:Q41711014-0C2E8C82-3C92-46B0-B042-3EC0E581BB6F wds:Q90442450-3355130B-49E3-40E5-A190-05A65D10D515 wds:Q58694677-84D5CEF2-1D8E-4F5F-816F-0E121F7EE7D3 wds:Q59792532-6F87F5FF-A3CD-4C17-9748-DC742C0D1773 wds:Q92134277-AA4D6738-CF31-4723-A060-A6EF94FC7B2E wds:Q35670299-1CC61A68-37E2-4D75-AC88-F1536E3A8E14

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