About: Behavior of In0.48Ga0.52P/(Al0.2Ga0.8)0.52In0.48P quantum-well luminescence as a function of temperature

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About: Behavior of In0.48Ga0.52P/(Al0.2Ga0.8)0.52In0.48P quantum-well luminescence as a function of temperature Goto Sponge NotDistinct Permalink

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scientific article published on 01 August 1995

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в серпні 1995 (uk) article scientifique publié en 1995 (fr) im August 1995 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu n'agostu de 1995 (ast) scientific article published on 01 August 1995 (en)
publication date	wds:Q78142565-E05DB753-F6C5-4621-BA16-AEFF3948591F
publication date	1995-08-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q78142565-4DA6720B-C088-4268-B6DE-3D38798746D3
language of work or name	English
cites work	wds:Q78142565-07437B3D-3B0E-4767-BDA4-7AF356CB8015 wds:Q78142565-33FCE94A-46D9-43BF-973A-9F4960D5B05E wds:Q78142565-5699F013-CD51-4CC7-899F-3E6A371194AC wds:Q78142565-799274A6-F5D2-4BF8-A92A-110A06C62EC1 wds:Q78142565-7F84A01E-E34D-478E-B70B-04747C6E0723 wds:Q78142565-AAEABF98-1752-497E-8183-F003611A4FAD wds:Q78142565-D4476A8F-67E3-4378-9D4F-C0E335FA938F
cites work	Linewidth dependence of radiative exciton lifetimes in quantum wells Exciton dynamics inInxGa1−xAs/GaAs quantum-well heterostructures: Competition between capture and thermal emission Influence of barrier height on carrier lifetime in Ga1-yInyP/(AlxGa1-x)1-yInyP single quantum wells. Investigation of InGaAs-InP quantum wells by optical spectroscopy Influence of barrier height on carrier dynamics in strained InxGa1-xAs/GaAs quantum wells. Thermal quenching and retrapping effects in the photoluminescence of InyGa1-yAs/GaAs/AlxGa1-xAs multiple-quantum-well structures Measurement of the direct energy gap ofAl0.5In0.5P: Implications for the band discontinuity atGa1−xInxP/AlyIn1−yP heterojunctions
author name string	wds:Q78142565-340790C6-021E-483A-BD59-E471BFED7871 wds:Q78142565-5BCC64B2-11CC-459F-A839-8D2DBC8363A7 wds:Q78142565-94FA829C-9B60-4126-88C7-437D81D7866F wds:Q78142565-A8859263-9622-4E55-A219-14ABFF3511EF wds:Q78142565-B448DEC5-489B-48E1-AFBF-E2D1F54539A5
author name string	Walsh S Daly EM Glynn TJ Lambkin JD Considine L
rdfs:label	Behavior of In0.48Ga0.52P/(Al0.2Ga0.8)0.52In0.48P quantum-well luminescence as a function of temperature (en) Behavior of In0.48Ga0.52P/(Al0.2Ga0.8)0.52In0.48P quantum-well luminescence as a function of temperature (nl)
skos:prefLabel	Behavior of In0.48Ga0.52P/(Al0.2Ga0.8)0.52In0.48P quantum-well luminescence as a function of temperature (en) Behavior of In0.48Ga0.52P/(Al0.2Ga0.8)0.52In0.48P quantum-well luminescence as a function of temperature (nl)
name	Behavior of In0.48Ga0.52P/(Al0.2Ga0.8)0.52In0.48P quantum-well luminescence as a function of temperature (en) Behavior of In0.48Ga0.52P/(Al0.2Ga0.8)0.52In0.48P quantum-well luminescence as a function of temperature (nl)
title	wds:Q78142565-CB7B6308-4242-49B2-82E4-88CD2ABC1A0C
title	Behavior of In0.48Ga0.52P/(Al0.2Ga0.8)0.52In0.48P quantum-well luminescence as a function of temperature (en)
page(s)	wds:Q78142565-2323B8D1-EE8A-4A30-925A-DE78620C596C
page(s)	4696-4699
instance of	wds:Q78142565-28B7FA55-D3CE-4D09-B04E-B9BEDF89C0C5
instance of	scholarly article
PubMed ID	wds:Q78142565-A552A4A4-375A-486B-8278-EB7CEAE8FE7D
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/9981637
PubMed ID	9981637
published in	wds:Q78142565-33B09953-0BF8-4A88-A3CD-39F963502D0F
published in	Physical Review B
issue	wds:Q78142565-2B56E1E9-87DC-4BC4-8B9B-B1373486547C
volume	wds:Q78142565-AF30DAEA-94C4-4083-9E76-E9B18ADC38F6
issue	7
volume	52
number of pages	wds:Q78142565-8B8B2EAD-4479-4366-A2FF-19685A31AC8E
number of pages	4 (xsd:decimal)
DOI	wds:Q78142565-625FB6D8-92C8-4485-8536-A5DE7FCD3913
DOI	http://dx.doi.org/10.1103/PHYSREVB.52.4696
DOI	10.1103/PHYSREVB.52.4696
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q78142565
is cites work of	Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires Quantum dot formation by segregation enhanced CdSe reorganization
is cites work of	wds:Q62382185-F5B1EB28-049D-4FFF-9F0C-36C343499005 wds:Q59476058-CF76E6C2-2649-4FE2-8D76-3C57E480D780

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