About: Atomic displacements of Si in the Si(111)-( sqrt 3 x sqrt 3) R30 degrees-Ag surface studied by high-energy ion channeling

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About: Atomic displacements of Si in the Si(111)-( sqrt 3 x sqrt 3) R30 degrees-Ag surface studied by high-energy ion channeling Goto Sponge NotDistinct Permalink

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scientific article published on 01 November 1988

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в листопаді 1988 (uk) article scientifique publié en 1988 (fr) im November 1988 veröffentlichter wissenschaftlicher Artikel (de) scientific article published on 01 November 1988 (en) artículu científicu espublizáu en payares de 1988 (ast)
publication date	wds:Q78003870-25C37CE5-B76C-49D1-983F-EAA8E16320AF
publication date	1988-11-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q78003870-7BBDDD95-B54B-41DB-84D2-1826F4E1773C
language of work or name	English
cites work	wds:Q78003870-4133CEE5-C756-4547-9EB9-617A04FE476F wds:Q78003870-4775DDB7-2E72-43FE-A04B-6CB310EA4982 wds:Q78003870-4D578E6E-079E-406F-A95A-829C51530557 wds:Q78003870-4E1321FD-E590-4374-BE0E-F9BA59B5E98C wds:Q78003870-877E4F50-0929-4B96-BBB2-447CC6B1AD48 wds:Q78003870-A434709E-ED4C-456A-A4F3-636F1C759091 wds:Q78003870-AF8475AA-0F34-4877-B729-C061EEBD0EBC
cites work	7 × 7 Reconstruction on Si(111) Resolved in Real Space Registration and nucleation of the Ag/Si(111)( sqrt 3 x sqrt 3)R30 degrees structure by scanning tunneling microscopy Structural analysis of Si(111)‐7×7 by UHV‐transmission electron diffraction and microscopy Surface and bulk core-level shifts of the Si(111) sqrt 3 sqrt 3 -Ag surface: Evidence for a charged sqrt 3 sqrt 3 layer Local electron states and surface geometry of Si(111)- sqrt 3 sqrt 3 Ag Structure of the Ag/Si(111) surface by scanning tunneling microscopy Measurement of the silicon (111) surface contraction
author name string	wds:Q78003870-0C24656F-315D-46BA-8E5E-93C862AB2634 wds:Q78003870-3801A9A1-05A1-4BF8-8BD1-4C4EAF91B1BB wds:Q78003870-7C845724-165A-4FB6-897A-ACE9880D5C49 wds:Q78003870-85C2CA10-44F5-4C4D-804D-B336960712C4
author name string	Hanawa T Shoji F Oura K Watamori M
rdfs:label	Atomic displacements of Si in the Si(111)-( sqrt 3 x sqrt 3) R30 degrees-Ag surface studied by high-energy ion channeling (en) Atomic displacements of Si in the Si(111)-( sqrt 3 x sqrt 3) R30 degrees-Ag surface studied by high-energy ion channeling (nl)
skos:prefLabel	Atomic displacements of Si in the Si(111)-( sqrt 3 x sqrt 3) R30 degrees-Ag surface studied by high-energy ion channeling (en) Atomic displacements of Si in the Si(111)-( sqrt 3 x sqrt 3) R30 degrees-Ag surface studied by high-energy ion channeling (nl)
name	Atomic displacements of Si in the Si(111)-( sqrt 3 x sqrt 3) R30 degrees-Ag surface studied by high-energy ion channeling (en) Atomic displacements of Si in the Si(111)-( sqrt 3 x sqrt 3) R30 degrees-Ag surface studied by high-energy ion channeling (nl)
title	wds:Q78003870-9904133A-9F4D-41B7-964B-51754E682ED7
title	Atomic displacements of Si in the Si(111)-( sqrt 3 x sqrt 3) R30 degrees-Ag surface studied by high-energy ion channeling (en)
page(s)	wds:Q78003870-96735E08-8EE8-4B98-99BE-9EAF5E84D358
page(s)	10146-10149
instance of	wds:Q78003870-2390D4DC-9181-43A4-88C5-BFE9CCAEE7C5
instance of	scholarly article
PubMed ID	wds:Q78003870-A84AB6E2-B28C-434C-A9D3-1564EAD3489C
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/9945863
PubMed ID	9945863
published in	wds:Q78003870-25FC41D0-D543-4F31-BFFD-414331CFFBE8
published in	Physical Review B
issue	wds:Q78003870-109B5D1F-EBF2-47F8-BD72-50165EF2C5FC
volume	wds:Q78003870-277A973D-81CE-4538-93BA-D09D03A2A84C
issue	14
volume	38
DOI	wds:Q78003870-2A7114D0-2FB4-4629-A1F8-C394FF86538C
DOI	http://dx.doi.org/10.1103/PHYSREVB.38.10146
DOI	10.1103/PHYSREVB.38.10146
Fatcat ID	wds:Q78003870-DE2B2B1C-1601-4F95-BB65-405BC0F7E0D6
Fatcat ID	release_ixsqfjf7zjbczorn5jirguw45a
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q78003870
is cites work of	Structure analysis of Si(111)-( sqrt 3 x sqrt 3 )R30 degrees/Ag using x-ray standing waves Fermi-level pinning and surface-state band structure of the Si(111)-( sqrt 3 x sqrt 3)R30 degrees -Ag surface
is cites work of	wds:Q78210768-948B76E0-B72D-4252-B78E-A9A37CA9B8A8 wds:Q74498006-97EEBA1D-557B-4F70-9215-721AD6C41CC7

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