About: Final-state effects in photoemission from metal-semiconductor interfaces

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scientific article published on 01 July 1991

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в липні 1991 (uk) im Juli 1991 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en xunetu de 1991 (ast) scientific article published on 01 July 1991 (en)
publication date	wds:Q74511017-7355D686-6633-493C-BBDE-B24D5258DBB5
publication date	1991-07-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74511017-5A04C7C8-36F0-4566-AE0B-5B6E3BCB3EC9
language of work or name	English
cites work	wds:Q74511017-1F004C3E-CFA9-4D9C-9737-E93EF7F90C08 wds:Q74511017-52C4C45D-98B2-46B8-9A50-F0947341F53D wds:Q74511017-97BAEEEA-E54F-45AA-BD63-17E641E19619 wds:Q74511017-9FC16307-21BE-4B31-B534-930B50F8781C wds:Q74511017-B13DF63C-A61C-4BC2-AAEA-33EA08783A59 wds:Q74511017-CD97E55D-E99C-4DA2-8AFD-2C1F2CBE411F wds:Q74511017-DEFB8C06-D3FF-4106-8BEA-0DF2F7EBCBAB wds:Q74511017-F1601FF3-2A08-41F5-868E-ABA1840C5D2E wds:Q74511017-F6F198CF-E413-4DFB-B26D-1316590325FC wds:Q74511017-F7579E2A-1A85-4260-9DB1-FAF351E6E7ED wds:Q74511017-FF0F1772-0A43-4DD9-B0C2-A8F233A53BFE
cites work	Correlation between EF pinning and development of metallic character in Ag overlayers on GaAs(110) Self-energy operators and exchange-correlation potentials in semiconductors Density-functional calculation of the parameters in the Anderson model: Application to Mn in CdTe Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces Weitering et al. reply Photoemission study of reactive rare-earth/semiconductor interfaces: Tm/GaAs(110) and Yb/GaAs(110) Trends in self-energy operators and their corresponding exchange-correlation potentials Delocalization effects at metal-semiconductor interfaces Switching of band bending at the nonreactive CsOx/GaAs(110) interface Quasiparticle energies in GaAs and AlAs Comment on "Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces"
author name string	wds:Q74511017-76C36C04-8457-4F95-9D1D-2DE81D841F38 wds:Q74511017-EF361C7D-5CD1-4E8C-AF26-F374B8920256 wds:Q74511017-F4A3AB56-26D3-4CC3-B2CA-7B31F22A3D07
author name string	Karlsson K Kanski J Nyqvist O
rdfs:label	Final-state effects in photoemission from metal-semiconductor interfaces (en) Final-state effects in photoemission from metal-semiconductor interfaces (nl)
skos:prefLabel	Final-state effects in photoemission from metal-semiconductor interfaces (en) Final-state effects in photoemission from metal-semiconductor interfaces (nl)
name	Final-state effects in photoemission from metal-semiconductor interfaces (en) Final-state effects in photoemission from metal-semiconductor interfaces (nl)
title	wds:Q74511017-FC4F655A-D790-4CAB-9E60-AF702304A07C
title	Final-state effects in photoemission from metal-semiconductor interfaces (en)
page(s)	wds:Q74511017-2E1A4D6C-966B-4988-AF06-35CC9194F55D
page(s)	236-239
instance of	wds:Q74511017-C7B135C1-24D4-4566-BA95-7678A9FA4874
instance of	scholarly article
PubMed ID	wds:Q74511017-7BB08CE4-BBDE-42B6-BA0B-9F3025FBD2EE
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10044529
PubMed ID	10044529
published in	wds:Q74511017-D4E884AB-24D4-42F4-A54C-6898868FF3DE
published in	Physical Review Letters
issue	wds:Q74511017-386A5C5A-AEFE-4CE5-9C81-C505B85144D1
volume	wds:Q74511017-19DC6F9E-5373-4DB2-989C-2A7D3495F720
issue	2
volume	67
DOI	wds:Q74511017-D9BD9803-42F5-4B2E-AB71-107AFA624D29
DOI	http://dx.doi.org/10.1103/PHYSREVLETT.67.236
DOI	10.1103/PHYSREVLETT.67.236
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74511017
is cites work of	Photoemission study of the growth, desorption, Schottky-barrier formation, and atomic structure of Pb on Si(111) Photoemission observation of Na-induced states in the band gap and evidence for charge transfer in Na/GaP(110)
is cites work of	wds:Q74393572-0742AF63-5B42-4468-87A4-625DE9821965 wds:Q74360037-57E583A5-1C72-4A84-A014-DBC098F6BE26

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