About: Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces

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scientific article published on 01 March 1989

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в березні 1989 (uk) im März 1989 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en marzu de 1989 (ast) scientific article published on 01 March 1989 (en)
publication date	wds:Q74494091-66242892-A876-4819-AA45-536A7E7EC5E4
publication date	1989-03-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74494091-3557ED9D-59A9-4C6A-9E53-2261057E95BD
language of work or name	English
cites work	wds:Q74494091-07FB7DB5-7BC5-4A2C-8915-2294C2C93DC0 wds:Q74494091-1A860974-AAF0-4335-B7E5-21488F9FA063 wds:Q74494091-23309E77-B13B-4731-9E74-E29B03BC2294 wds:Q74494091-242CD75C-4C86-461A-A9EE-4ED677C52DA3 wds:Q74494091-314766E0-0640-4CF4-940A-2CCCA127B4E5 wds:Q74494091-43B14210-7318-4F52-9B6D-BEA8341B64B3 wds:Q74494091-60A0E3B5-7A43-4857-BB75-18252C217331 wds:Q74494091-A8AC86E3-5697-4AA6-AE56-9D47ED325AA6 wds:Q74494091-DA8FF52F-D4E0-41A9-A144-29F2BE01FC7F
cites work	Correlation between EF pinning and development of metallic character in Ag overlayers on GaAs(110) Role of virtual gap states and defects in metal-semiconductor contacts Layer-resolved shifts of photoemission and Auger spectra from physisorbed rare-gas multilayers. Epitaxy, overlayer growth, and surface segregation for Co/GaAs(110) and Co/GaAs(100)-c(82) 3d transition metals on InP(110): A comparative study of reactive interface evolution Electronic properties and chemistry of Ti/GaAs and Pd/GaAs interfaces Evolution of the Pt conduction band in a solid Xe layer Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy Temperature-dependent interface evolution for Ti/GaAs(100) and Cr/GaAs(100)
author name string	wds:Q74494091-462EAB73-E1BB-4F38-9FD3-F858002668A3 wds:Q74494091-52598DAB-ECF6-403F-A5E5-F7409AEEED37 wds:Q74494091-60378E89-7B55-4A04-8DD5-B983DFA750DF wds:Q74494091-A5B25855-F91B-4352-BD9F-553D3FE7F002
author name string	Weaver JH Waddill GD Aldao CM Vitomirov IM
rdfs:label	Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces (en) Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces (nl)
skos:prefLabel	Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces (en) Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces (nl)
name	Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces (en) Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces (nl)
title	wds:Q74494091-B533EDD3-4AC0-4210-92C0-D8B401DAFC84
title	Cluster deposition on GaAs(110): Formation of abrupt, defect-free interfaces (en)
page(s)	wds:Q74494091-8733CC9B-2A65-4780-B24C-145EDCBF81D3
page(s)	1568-1571
instance of	wds:Q74494091-ED65C605-C005-4587-8150-1D6F6481D542
instance of	scholarly article
PubMed ID	wds:Q74494091-59F5D321-93E0-4FA3-B08B-5425D4E1C9F7
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10039707
PubMed ID	10039707
published in	wds:Q74494091-1F1E158B-E712-42A9-87DE-567362ECE27B
published in	Physical Review Letters
issue	wds:Q74494091-0F2631B8-7008-4E95-8F00-0B05CF424D8C
volume	wds:Q74494091-7E4D3A9C-4FEC-45AA-9DE9-1BC5537A572A
issue	13
volume	62
DOI	wds:Q74494091-8B8B4549-B05C-4C20-8D8D-550E3E7E46DF
DOI	http://dx.doi.org/10.1103/PHYSREVLETT.62.1568
DOI	10.1103/PHYSREVLETT.62.1568
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74494091
is cites work of	Potassium-induced unrelaxation of the GaAs(110) surface Stability and dynamics of surface vacancies on GaAs(110) Atom- and cluster-assembled interfaces: Cr growth on Bi2Sr2-xCa1+xCu2O8+y Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K Temperature effects for Ti/GaAs(110) interface formation involving cluster and atom deposition Abrupt interfaces with novel structural and electronic properties: Metal-cluster deposition and metal-semiconductor junctions Unrelaxation of the semiconductor surface at low-coverage Ag/InP(110) interfaces as determined by photoemission extended x-ray-absorption fine structure Atomic structure of Al-GaAs(110) interfaces Metal-InP(110) interface properties: Temperature, dopant-concentration, and cluster-deposition dependencies Deposition of Ag ions and neutral atoms on ZnSe(100): Influence of interface morphology on Schottky-barrier formation Interface formation with ions and neutral atoms Adatom-induced donor states during the early stages of Schottky-barrier formation: Ga, In, and Pb on Si(113) Modeled microscopic structures of monatomic and diatomic Al on stepped and unstepped GaP(110) surfaces Kinetics study of the GaP(110)/Cu interface via P L2,3VV Auger line shape and x-ray-photoemission spectroscopies
is cites work of	wds:Q78125136-BADAB394-7005-4FBD-AD7F-EA826ECA56A7 wds:Q78181030-DA8F2B13-723F-41EA-8349-84D07388001E wds:Q78207059-03342A61-FC6E-4A7B-987E-B84E1FF969EA wds:Q74519438-E04BE071-610F-48DD-8439-A96BE5558683 wds:Q78191695-BCB8CA36-00A4-4C78-A615-0CE00E78EFF2 wds:Q78195921-5F6FCDB2-F5D1-4E79-BE33-87F9D5C7A9EE wds:Q78201105-093FAF05-DD91-481D-87A4-FA42BC46843F wds:Q78193003-5B720527-8368-4B43-AE5A-BAA864ED58BD wds:Q78193674-200C7BF1-5020-47D7-9CB8-102EE43CB64C wds:Q78012339-AC43B32A-277F-43CE-9D38-93B4BD6FB1F4 wds:Q78201547-5794DC98-1B5F-4CAE-B719-7251C6269271 wds:Q78190634-0E031BB7-13B7-41B0-AE2F-7547715589F2 wds:Q74388564-F4FAE8A1-5F39-427E-AD08-6FD2877D44E4 wds:Q78206946-C48BF6C7-361F-40B5-8E84-3767C52A01B4

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