About: Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship

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About: Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship Goto Sponge NotDistinct Permalink

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scientific article published on 01 July 1993

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в липні 1993 (uk) article scientifique publié en 1993 (fr) im Juli 1993 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en xunetu de 1993 (ast) scientific article published on 01 July 1993 (en)
publication date	wds:Q74393926-AA2C1319-B655-4F40-B366-207584D82DDB
publication date	1993-07-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74393926-1F574752-9B9D-439D-A894-9ED21B17F0FC
language of work or name	English
cites work	wds:Q74393926-8DA15E95-EF9D-4148-85A3-463AFC719780
cites work	The Dipolar Broadening of Magnetic Resonance Lines in Crystals
author name string	wds:Q74393926-E91F37E1-0EBF-4F66-89A8-F4580F76DBB6
author name string	Stesmans A
rdfs:label	Structural relaxation of Pb defects at the (nl) Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship (en)
skos:prefLabel	Structural relaxation of Pb defects at the (nl) Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship (en)
name	Structural relaxation of Pb defects at the (nl) Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship (en)
title	wds:Q74393926-4E829811-D903-4CA5-9E45-E9839F398E48
title	Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship (en)
page(s)	wds:Q74393926-050603BB-0F20-4359-B38C-9B2D04378853
page(s)	2418-2435
instance of	wds:Q74393926-7A82F8D1-CF64-49EE-9A1A-5D616324A9AD
instance of	scholarly article
PubMed ID	wds:Q74393926-6DE63CC5-CAE0-4B16-ADDE-49D1CA392650
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10008634
PubMed ID	10008634
published in	wds:Q74393926-C72AC135-38E1-4AAE-91A4-4A4479BCB2AC
published in	Physical Review B
issue	wds:Q74393926-A484A01C-FBD4-4AA0-95A1-020C7D16EA65
volume	wds:Q74393926-FE53A6A5-D790-4207-B5F7-0866C8299922
issue	4
volume	48
number of pages	wds:Q74393926-29D0BF74-A06B-4F9D-AB27-FCFA0A0B0AE6
number of pages	18 (xsd:decimal)
DOI	wds:Q74393926-F0B7C01A-329D-4DE7-9308-3BF01682F887
DOI	http://dx.doi.org/10.1103/PHYSREVB.48.2418
DOI	10.1103/PHYSREVB.48.2418
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74393926
is cites work of	EPR and ENDOR study of the Pb center in porous silicon Emission efficiency limit of Si nanocrystals Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces Structure and visible photoluminescence of porous Si1-xGex Second-harmonic generation from SiO2/Si(111) interfaces Annealing effect on native-oxide/Si(111) interfaces studied by second-harmonic generation Natural intrinsic EX center in thermal SiO2 on Si: 17O hyperfine interaction Thermally induced interface degradation in (111) Si/SiO2 traced by electron spin resonance
is cites work of	wds:Q78117363-4EDFE066-B770-4211-9705-D04684264C08 wds:Q60122244-DBFD81C6-96DE-431F-BB48-864D26747802 wds:Q78114526-CDF88D09-A039-4311-881A-F4863555499C wds:Q78127131-06342C1A-99B2-4C80-8716-F5824EFC7E78 wds:Q78155799-B0477126-F3C6-451A-A8C7-2414C8C74104 wds:Q36500247-4689C861-0CC1-42CF-B243-06D540410FD4 wds:Q78120952-A50E4953-6087-4902-920F-A89BC4C0B32F wds:Q78137585-954DD78B-8A7F-461C-B7DB-7A4C400FA8AE

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