About: Enhanced In surface segregation during molecular-beam epitaxy of (In,Ga)As on (h11) GaAs for small values of h

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scientific article published on 01 October 1993

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в жовтні 1993 (uk) im Oktober 1993 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu n'ochobre de 1993 (ast) scientific article published on 01 October 1993 (en)
publication date	wds:Q74388131-EF57133F-0079-4EF3-B918-4F244F687676
publication date	1993-10-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74388131-38B0D460-0211-493A-B7C6-66A6BFD5749E
language of work or name	English
cites work	wds:Q74388131-145D012F-80E4-4D30-B2EB-F5189B10E223 wds:Q74388131-22959EA8-C87D-4F40-870C-7E6CB591D0EC wds:Q74388131-2934B63A-E4C1-41E6-8865-11763FAE2D62 wds:Q74388131-2CBDC23C-A63B-4C66-A83A-7DF3A5926A14 wds:Q74388131-33E08799-62BE-4BA4-95DC-3EDEED969240 wds:Q74388131-419AFDAF-F454-4471-B6BB-65C7A917FCF4 wds:Q74388131-46793C26-AA15-4408-84AD-91CC926C644A wds:Q74388131-496082A7-90AC-4B71-8C12-FEFD2CF6694D wds:Q74388131-4BD6ACE4-66EA-41C6-9C7F-208A23EEFC0E wds:Q74388131-648E2E7F-CBC6-421D-ABE2-A458460DAED2 wds:Q74388131-7A280475-91DD-4F9A-9BD8-BE2A37C594BE wds:Q74388131-8F03A56F-91AD-49D9-A1BB-6B8E02B0BCD2 wds:Q74388131-9FA4E172-B2FE-4A5F-84F2-E5638C3BB6AA wds:Q74388131-B5665BE3-9479-4EC7-805F-AFAB8F5AAC28 wds:Q74388131-B76EBD8A-C86A-43EA-9400-26869409CF26 wds:Q74388131-BA4C8926-6E71-4F29-BDA8-8D3B759DDE2F wds:Q74388131-D1FFE2AE-35E1-4D37-9B74-F89E4FF2FD07 wds:Q74388131-D5B42540-7609-441E-9C83-FF61140C15AC wds:Q74388131-EE6670CF-2BF0-4E5E-95EE-9BAE584299C0 wds:Q74388131-F81ED0C6-0E53-4167-A113-7DDAD0D2D0DD
cites work	Band lineups and deformation potentials in the model-solid theory Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures Band nonparabolicity effects in semiconductor quantum wells Electronic structure of Luttinger parameters for GaAs determined from the intersubband transitions in GaAs/AlxGa Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces Effective-mass theory for superlattices grown on (11N)-oriented substrates. Observation of the 2s state excitons in (111)-oriented GaAs/AlxGa X-ray interference in ultrathin epitaxial layers: A versatile method for the structural analysis of single quantum wells and heterointerfaces Strain effect on band offsets at pseudomorphic InAs/GaAs heterointerfaces characterized by x-ray photoemission spectroscopy Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy Surface-sandwich segregation in Pt-Ni and Ag-Ni alloys: Two different physical origins for the same phenomenon Optical characterization of InAs monolayer structures grown on (113)A and (001) GaAs substrates Piezo-optical effects in GaAs with interspersed (211)-InAs lattice planes Formation and morphology of InAs/GaAs heterointerfaces Monolayer scale study of segregation effects in InAs/GaAs heterostructures Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxy X-ray standing wave and high-resolution x-ray diffraction study of the GaAs/InAs/GaAs(100) heterointerface
author name string	wds:Q74388131-266721DC-909C-4A78-850A-F97543D3A818 wds:Q74388131-8A9FC8A4-10C6-4D47-B69B-FEB25219BB30
author name string	Ploog KH Ilg M
rdfs:label	Enhanced In surface segregation during molecular-beam epitaxy of (In,Ga)As on (h11) GaAs for small values of h (en) Enhanced In surface segregation during molecular-beam epitaxy of (In,Ga)As on (h11) GaAs for small values of h (nl)
skos:prefLabel	Enhanced In surface segregation during molecular-beam epitaxy of (In,Ga)As on (h11) GaAs for small values of h (en) Enhanced In surface segregation during molecular-beam epitaxy of (In,Ga)As on (h11) GaAs for small values of h (nl)
name	Enhanced In surface segregation during molecular-beam epitaxy of (In,Ga)As on (h11) GaAs for small values of h (en) Enhanced In surface segregation during molecular-beam epitaxy of (In,Ga)As on (h11) GaAs for small values of h (nl)
title	wds:Q74388131-FCAD078D-0581-47CC-BA21-FD56E582CC91
title	Enhanced In surface segregation during molecular-beam epitaxy of (In,Ga)As on (h11) GaAs for small values of h (en)
page(s)	wds:Q74388131-5E74FDDD-0BDB-4B53-9793-07CB66BAA31C
page(s)	11512-11515
instance of	wds:Q74388131-F059B18F-A4DF-4EB3-8606-082FD3FD203F
instance of	scholarly article
PubMed ID	wds:Q74388131-5730A140-FEB1-4096-AB66-024EFCCE2DA0
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10007486
PubMed ID	10007486
published in	wds:Q74388131-ECA780B0-1A64-473A-9B02-26FDB9284220
published in	Physical Review B
issue	wds:Q74388131-1CFE028A-49CF-47B5-8913-1C33626B9F1E
volume	wds:Q74388131-A20866E4-636E-4124-9C53-671F7713932F
issue	15
volume	48
DOI	wds:Q74388131-6CE1FBB4-455A-4102-97D8-3747DA7045FE
DOI	http://dx.doi.org/10.1103/PHYSREVB.48.11512
DOI	10.1103/PHYSREVB.48.11512
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74388131
is cites work of	Optical investigation of the electronic structure of single ultrathin InAs layers grown pseudomorphically on (100) and (311)AGaAs substrates
is cites work of	wds:Q60179280-B95EA164-183B-4260-9F10-2CE764C49818

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