About: Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces

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About: Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces Goto Sponge NotDistinct Permalink

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scientific article published on 01 January 1993

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) bài báo khoa học (vi) наукова стаття, опублікована в січні 1993 (uk) im Januar 1993 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en xineru de 1993 (ast) artikull shkencor i botuar më 01 janar 1993 (sq) scientific article published on 01 January 1993 (en)
publication date	wds:Q74381746-548B5413-E1D3-4436-AAF8-E80322CF371B
publication date	1993-01-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q74381746-8722145A-EDCD-4FEB-85DF-1559CB87CBAA
language of work or name	English
author name string	wds:Q74381746-0AC0E177-5926-4FF1-B5CD-6EAE26C41D53 wds:Q74381746-89B4ECF8-57F8-44A0-BA99-57EF2731C3DD wds:Q74381746-964E09B2-A78C-4A20-980A-E5A98821BD51 wds:Q74381746-A8EC8BCF-6E8D-4537-A037-5C4A92C4E398
author name string	Liu H Williams GP Jr Williams RT Rowe MW
rdfs:label	Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces (en) Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces (nl)
skos:prefLabel	Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces (en) Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces (nl)
name	Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces (en) Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces (nl)
title	wds:Q74381746-9F55C706-C730-456C-A359-BD2E187F69C8
title	Picosecond photoelectron spectroscopy of excited states at Si(111) sqrt 3 x sqrt 3 R30 degrees-B, Si(111)7 x 7, Si(100)2 x 1, and laser-annealed Si(111)1 x 1 surfaces (en)
page(s)	wds:Q74381746-4ACAC20A-C06D-41A3-8358-3EDC4FB8064A
page(s)	2048-2064
instance of	wds:Q74381746-09A92D3B-A548-47C0-8353-02085E004E6F
instance of	scholarly article
PubMed ID	wds:Q74381746-62AC1F0A-D89D-466A-9A2C-888093EA128D
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/10006244
PubMed ID	10006244
published in	wds:Q74381746-23CAEFAD-67B2-4F3A-ABAB-9621934D0604
published in	Physical Review B
issue	wds:Q74381746-15E30225-E1C4-4AE6-857A-6CF544A0DA80
volume	wds:Q74381746-1B11E04E-90C4-4A84-A7B7-089E06E406FC
issue	4
volume	47
DOI	wds:Q74381746-1AF64E73-D785-4312-B142-A5322083D22F
DOI	http://dx.doi.org/10.1103/PHYSREVB.47.2048
DOI	10.1103/PHYSREVB.47.2048
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q74381746
is cites work of	Two-photon photoelectron spectroscopy of GaP(110) after sputtering, annealing, and multishot laser damage Ultrafast carrier dynamics on the Si(100)2 x 1 surface
is cites work of	wds:Q78159346-8D6A4485-000A-40C0-8BF0-35DD7512160B wds:Q31907939-34A92144-6C62-4DA1-9B41-98ADB2F8DD83

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