About: Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers

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rdf:type	Item
description	article (en) wetenschappelijk artikel (nl) наукова стаття, опублікована в червні 2002 (uk) article scientifique publié en 2002 (fr) im Juni 2002 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q62603771-BC9EE8C0-5F98-4BFC-A2A2-EC3B0370C684
publication date	2002-06-01 00:00:00Z (xsd:dateTime)
cites work	wds:Q62603771-62F3EB9C-0972-4C70-B29A-C138C594BF5C wds:Q62603771-D37450D8-1227-4FA5-8BD3-748432FA1EB3
cites work	Impact of column bending in high-resolution transmission electron microscopy on the strain evaluation of GaAs/InAs/GaAs heterostructures Anisotropic Hyperelasticity Based Upon General Strain Measures
author name string	wds:Q62603771-0E4A00D5-3B97-4C08-A47F-F73620CD1BE2 wds:Q62603771-12B94D43-BCE8-4EA3-96FC-3271945C784A wds:Q62603771-5A6B25DB-8653-4F5C-B1E6-2E18C48F8A5D wds:Q62603771-5DDC9D3C-5B44-42CA-B7C9-AC78DDC746B1 wds:Q62603771-7FEF6E79-F02D-4509-9CFF-C3A35EB53118
author name string	P. Ruterana G. Maciejewski P. Dluzewski S. Kret A. Vivet
rdfs:label	Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers (en) Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers (nl)
skos:prefLabel	Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers (en) Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers (nl)
name	Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers (en) Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers (nl)
author	wds:Q62603771-AD3BCD9B-3387-4DA2-AF5F-9DD8157FB1D7
author	Sławomir Kret
title	wds:Q62603771-1E0B73FC-E244-4018-AA84-7AD9EF989750
title	Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers (en)
page(s)	wds:Q62603771-16EFACDE-3074-4825-A449-0067DE2153BE
page(s)	8979-8985
instance of	wds:Q62603771-BD66A0E0-445D-4525-A4D9-536F81DCF14A
instance of	scholarly article
published in	wds:Q62603771-E6D98DE9-AD14-448D-A79A-02BF38A9FD2C
published in	Journal of Applied Physics
issue	wds:Q62603771-49E9B620-26B2-40AC-8E0F-9F8BA67C6016
volume	wds:Q62603771-4838C6B4-8682-49FC-BAE9-57F23102C0A1
issue	11
volume	91
DOI	wds:Q62603771-AD2FF558-5A8C-480D-AD91-BF4EC6B41686
DOI	http://dx.doi.org/10.1063/1.1473666
DOI	10.1063/1.1473666
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q62603771
is cites work of	Atom probe tomography today Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers Quantitative strain mapping applied to aberration--corrected HAADF images. Thickness variations and absence of lateral compositional fluctuations in aberration-corrected STEM images of InGaN LED active regions at low dose V-defects and dislocations in InGaN/GaN heterostructures The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. Composition fluctuation of in and well-width fluctuation in InGaN/GaN multiple quantum wells in light-emitting diode devices.
is cites work of	wds:Q62564667-EA2666CD-4693-48A7-AB59-4CC584205F1D wds:Q44995844-927265AC-86C2-48D6-BEB7-CCB898A624F5 wds:Q58199143-2048E076-88BD-4A54-A455-38E0B1ACDB2B wds:Q50207940-E2E787B6-158E-49C3-81A9-EFB58C699E5A wds:Q46009338-B68E4590-DA27-4F01-83DA-805BFA6E003F wds:Q33250273-A407890B-B125-4F01-9F8B-D032FC6BB41F wds:Q56561034-1FFF4480-F0B9-42B7-BE38-2A593793FA6C

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