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article by Z. Borsosfoldi et al published 26 June 1995 in Applied Physics Letters

AttributesValues
rdf:type
description
  • wetenschappelijk artikel (nl)
  • наукова стаття, опублікована в червні 1995 (uk)
  • article scientifique publié en 1995 (fr)
  • im Juni 1995 veröffentlichter wissenschaftlicher Artikel (de)
  • article by Z. Borsosfoldi et al published 26 June 1995 in Applied Physics Letters (en)
publication date
publication date
language of work or name
language of work or name
author name string
author name string
  • J. H. Davies
  • M. Rahman
  • J. G. Williamson
  • I. A. Larkin
  • J. M. R. Weaver
  • A. R. Long
  • M. C. Holland
  • Z. Borsosfoldi
rdfs:label
  • Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures (en)
  • Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures (nl)
skos:prefLabel
  • Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures (en)
  • Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures (nl)
name
  • Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures (en)
  • Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures (nl)
author
author
title
title
  • Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures (en)
page(s)
page(s)
  • 3666-3668
instance of
instance of
main subject
main subject
published in
published in
issue
volume
issue
  • 26
volume
  • 66
DOI
DOI
DOI
  • 10.1063/1.114134
is about of
is cites work of
is cites work of
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