About: The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition

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scholarly article by C. Hallin et al published August 1997 in Diamond and Related Materials

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в серпні 1997 (uk) article scientifique publié en 1997 (fr) im August 1997 veröffentlichter wissenschaftlicher Artikel (de) scholarly article by C. Hallin et al published August 1997 in Diamond and Related Materials (en)
publication date	wds:Q62570388-C20D4953-B71E-4058-A4D5-C98E2AFAEF1F
publication date	1997-08-01 00:00:00Z (xsd:dateTime)
cites work	wds:Q62570388-ECFFE54E-5443-4994-A498-6B71549333DB
cites work	The Growth of Crystals and the Equilibrium Structure of their Surfaces
author name string	wds:Q62570388-4D3229B3-315E-4A3A-8C09-D464C253D376 wds:Q62570388-9125EADC-0FA1-4AB8-A47D-E674D1CB09CA wds:Q62570388-A6856338-A444-4F69-9F1C-DE33F0A6B640
author name string	A.O. Konstantinov C. Hallin B. Pécz
rdfs:label	The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition (en) The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition (nl)
skos:prefLabel	The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition (en) The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition (nl)
name	The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition (en) The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition (nl)
author	wds:Q62570388-8EB188E4-0646-46ED-8198-0C37F8E6D997 wds:Q62570388-F092D35A-6682-4976-A132-78A74C72012C
author	Erik Janzén Olof Kordina
title	wds:Q62570388-082B2131-DC82-41F0-959E-EE925512889F
title	The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition (en)
page(s)	wds:Q62570388-DBBC7D44-22E9-45FF-80E3-57239F340F7A
page(s)	1297-1300
instance of	wds:Q62570388-57E511C8-4FAF-4542-ABA9-A867FAA9671A
instance of	scholarly article
main subject	wds:Q62570388-A4CC1AEF-1E45-47CE-9B17-852FDEC11EB5
main subject	silicon carbide
published in	wds:Q62570388-19BFD351-7F89-416A-B442-D038779FAFEC
published in	Diamond and Related Materials
issue	wds:Q62570388-2020E2D5-C156-41D5-AA85-8A1D8EAD898A
volume	wds:Q62570388-889C49F3-DE24-4A9E-9EBC-6A0A16A76605
issue	10
volume	6
DOI	wds:Q62570388-7B433B47-6891-4537-B880-82C693E932C7
DOI	http://dx.doi.org/10.1016/S0925-9635(97)00083-6
DOI	10.1016/S0925-9635(97)00083-6
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q62570388
is cites work of	Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers
is cites work of	wds:Q62570273-288196B9-C4A3-4AED-9775-433538B38628

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