About: Effective barrier height, conduction‐band offset, and the influence ofp‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface

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About: Effective barrier height, conduction‐band offset, and the influence ofp‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface Goto Sponge NotDistinct Permalink

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article by T.‐H. Shen et al published 25 February 1991 in Applied Physics Letters

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в лютому 1991 (uk) article scientifique publié en 1991 (fr) im Februar 1991 veröffentlichter wissenschaftlicher Artikel (de) article by T.‐H. Shen et al published 25 February 1991 in Applied Physics Letters (en)
publication date	wds:Q61624538-08E09D20-2382-46DC-8CFA-993D6FB5B93E
publication date	1991-02-25 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q61624538-10406308-4AB6-4431-BA87-588FA748E182
language of work or name	English
cites work	wds:Q61624538-0D9E829A-D8B4-4772-8694-2E0F4E354C14 wds:Q61624538-2E494CDD-A2CD-45EB-944C-DF55ED0D9D97 wds:Q61624538-9C9E6216-9964-4DF6-82CB-FDDFA0928588 wds:Q61624538-CDAEE17C-FF04-46AA-8C95-CEC5F654F131 wds:Q61624538-E0B78109-5335-4AFE-884C-7A492FF0D9A6
cites work	Theory of semiconductor heterojunctions: The role of quantum dipoles Fermi Level Position at Metal-Semiconductor Interfaces Buildup of III-V-compound semiconductor heterojunctions: Structural and electronic properties of monolayer-thick III-V overlayers on III-V substrates Thomas-Fermi theory of delta -doped semiconductor structures: Exact analytical results in the high-density limit Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces
author name string	wds:Q61624538-284C5F2D-3A0A-4ACB-8BCA-1181C08B2601 wds:Q61624538-B6A4037B-3750-467C-9ED6-DA928F571006 wds:Q61624538-CEC8FDE8-7446-4560-80E4-2AD93F9F02FF
author name string	R. H. Williams D. Westwood T.‐H. Shen
rdfs:label	Effective barrier height, conduction‐band offset, and the influence ofp‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface (en) Effective barrier height, conduction‐band offset, and the influence ofp‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface (nl)
skos:prefLabel	Effective barrier height, conduction‐band offset, and the influence ofp‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface (en) Effective barrier height, conduction‐band offset, and the influence ofp‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface (nl)
name	Effective barrier height, conduction‐band offset, and the influence ofp‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface (en) Effective barrier height, conduction‐band offset, and the influence ofp‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface (nl)
author	wds:Q61624538-E5B18D69-376B-4734-AABD-55DE8F1C1934
author	Martin Elliott
title	wds:Q61624538-1AA1F0E5-D015-4617-ACF0-40EB12E2DD81
title	Effective barrier height, conduction‐band offset, and the influence ofp‐type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface (en)
page(s)	wds:Q61624538-813F6015-EB5D-40A3-A496-C12FC4E2C119
page(s)	842-844
instance of	wds:Q61624538-0D3181F5-1BD5-47C8-AEB9-BBE232A3D744
instance of	scholarly article
published in	wds:Q61624538-C9FB4D55-3179-4449-9CC0-3F240A391A00
published in	Applied Physics Letters
issue	wds:Q61624538-FF669269-C085-444F-8743-6F9E3A302E28
volume	wds:Q61624538-DCD857B4-BBBD-4EA1-A345-2D8ABACFA51E
issue	8
volume	58
DOI	wds:Q61624538-10E5FCC7-C132-4E83-BA35-FB07BF3DD9CE
DOI	http://dx.doi.org/10.1063/1.104507
DOI	10.1063/1.104507
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q61624538
is cites work of	Investigation of silicon delta‐doped gallium arsenide using the Shubnikov–de Haas effect and theoretical modeling
is cites work of	wds:Q61624532-631327C3-5603-4B0D-882C-DB979938DD71

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