About: Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness

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scholarly article in Physical Review B, vol. 75 no. 4, January 2007

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в січні 2007 (uk) article scientifique publié en 2007 (fr) im Januar 2007 veröffentlichter wissenschaftlicher Artikel (de) scholarly article in Physical Review B, vol. 75 no. 4, January 2007 (en)
publication date	wds:Q60500987-64A177E3-30EF-4791-817A-852B3198564F
publication date	2007-01-24 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q60500987-92B6F3C8-CF56-4885-84FC-5A0AB116C45B
language of work or name	English
cites work	wds:Q60500987-4D83DCAF-80E5-4A06-9D58-D3068309939B
cites work	Electronic properties of two-dimensional systems
author name string	wds:Q60500987-462015ED-B436-4BB2-88E3-AE841C32D7D4 wds:Q60500987-68AB7525-E68A-4449-B546-470A4CF6825E wds:Q60500987-9149A519-C2DE-4081-8971-D51011521C0D wds:Q60500987-9E5049E2-5C4E-4A60-AF23-3707E0500656 wds:Q60500987-A20D2A8A-E0C8-4E99-A9EE-441B721687F7 wds:Q60500987-AEEAF79B-13CF-4E2B-8626-038C29C329A2 wds:Q60500987-B3B4AD34-6A27-4DD4-AF64-45A79568D086 wds:Q60500987-D0E81E0E-3FAF-4EFC-BBB4-9ACD31D598FF
author name string	J. Zhang Marco Califano P. J. Phillips D. J. Paul C. R. Pidgeon A. G. Cullis N. Q. Vinh I. M. Ross
rdfs:label	Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness (en) Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness (nl)
skos:prefLabel	Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness (en) Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness (nl)
name	Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness (en) Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness (nl)
author	wds:Q60500987-0D386BE7-1E62-4BA7-BAAE-7E57C434ACF6 wds:Q60500987-DE64072D-0A10-4301-A9FE-D1A444064335 wds:Q60500987-E52FB2D4-E258-44C7-BE37-21AE4F4DCB5A wds:Q60500987-E7CF07E1-434E-4A03-9633-BF213131D90C wds:Q60500987-E7ED9738-E667-4456-95F0-944034A3AAFB
author	Ben N. Murdin Paul Harrison Zoran Ikonić Robert Kelsall Paul D Townsend
title	wds:Q60500987-37447221-7522-4710-B424-0BAB64C2F38B
title	Interwell relaxation times inp−Si∕SiGeasymmetric quantum well structures: Role of interface roughness (en)
instance of	wds:Q60500987-C9AAC171-E65A-42CE-869F-8EF02732B42E
instance of	scholarly article
main subject	wds:Q60500987-250F7D2F-C1F9-4439-9F61-7A1738BCF930
main subject	quantum well
published in	wds:Q60500987-7D68814F-1E1E-45FF-93C8-1E354FF4709F
full work available at URL	wds:Q60500987-CD174DBF-442E-4153-9C80-91B9ED57D757
published in	Physical Review B
full work available at URL	http://eprints.whiterose.ac.uk/4325
issue	wds:Q60500987-2A4F47F5-E525-4109-88A4-F5DFE5B86C10
volume	wds:Q60500987-6023119F-B267-4B16-9CAA-CED5D31C4E74
issue	4
volume	75
DOI	wds:Q60500987-D6818D4C-5A5C-4A70-A926-C8DFD1C478C0
DOI	http://dx.doi.org/10.1103/PHYSREVB.75.045338
DOI	10.1103/PHYSREVB.75.045338
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q60500987
is cites work of	Intersubband carrier scattering in n - and p − Si ∕ Si Ge quantum wells with diffuse interfaces
is cites work of	wds:Q21708390-5CCA3BD5-D292-4222-804E-FD0E9899919F

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