About: Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells

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About: Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells Goto Sponge NotDistinct Permalink

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scientific article published on 01 February 2012

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в лютому 2012 (uk) im Februar 2012 veröffentlichter wissenschaftlicher Artikel (de) artículu científicu espublizáu en febreru de 2012 (ast) artikull shkencor i botuar më 01 shkurt 2012 (sq) scientific article published on 01 February 2012 (en)
publication date	wds:Q59484185-74CB40E8-B42C-40F8-A00D-E8217118C223
publication date	2012-02-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q59484185-711AD2F2-1C12-4DCE-9659-8EA2D4E13E49
language of work or name	English
author name string	wds:Q59484185-1D4F6B24-A480-4F3D-AD05-B82625C75F90 wds:Q59484185-549CFA52-48B8-4E81-B603-34A3DE35B997 wds:Q59484185-9B762727-94BA-4192-8F08-79129D986A26 wds:Q59484185-9D1B35E8-A9D3-4C5F-8722-2180A3B8389A wds:Q59484185-B03C7057-00AE-4705-9726-842B2509A915 wds:Q59484185-CC32CE79-F006-47D4-8514-540A253E9159 wds:Q59484185-E9E0D0B1-B0B1-4AE5-8076-52033135240B wds:Q59484185-ED6D6DD7-12A7-4AAF-9544-136CC7D7826A
author name string	Gang Wang Shuang Qu Baoli Liu Xiangang Xu Huining Wang Yongzhi Jiang Ziwu Ji Hirofumi Mino
rdfs:label	Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells (en) Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells (nl) Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells (sq)
skos:prefLabel	Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells (en) Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells (nl) Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells (sq)
name	Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells (en) Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells (nl) Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells (sq)
author	wds:Q59484185-1BA71ABB-CAB6-4799-A11C-743BD275A2EA
author	Gang Wang
title	wds:Q59484185-D56A44B5-2417-489D-9E87-6912A62AC33F
title	Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells (en)
page(s)	wds:Q59484185-2C49EDAD-9564-497C-973E-15C7C6AC9F09
page(s)	3932-3940
instance of	wds:Q59484185-82673C5A-DC29-43B0-9BDD-2F5E3AF2548B
instance of	scholarly article
main subject	wds:Q59484185-32A6FFDF-8EAA-42F3-8F3E-8B1EC5A9AE4E
main subject	photoluminescence
PubMed ID	wds:Q59484185-EF2AFA1A-11C5-47D4-BA4C-9F1040D704B9
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/22418149
PubMed ID	22418149
published in	wds:Q59484185-A43A3BBC-159A-414C-ACF5-A19F316B81DE
published in	Optics Express
issue	wds:Q59484185-678A04BF-97BD-48C2-8830-0BB0FFE6FFDF
volume	wds:Q59484185-55EEB2E2-4BEA-4E3B-92CF-A068AE36D50A
issue	4
volume	20
DOI	wds:Q59484185-C8B8D79B-FF61-4802-BFAE-7968157D0A20
DOI	http://dx.doi.org/10.1364/OE.20.003932
DOI	10.1364/OE.20.003932
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q59484185
is cites work of	Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate On the phenomenon of large photoluminescence red shift in GaN nanoparticles Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In0.2Ga0.8N/GaN Quantum Wells of Blue LEDs. Photoluminescence of planar and 3D InGaN/GaN LED structures excited with femtosecond laser pulses close to the damage threshold Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells
is cites work of	wds:Q92563907-6927E129-746E-4BDE-AE50-C7E2355E3402 wds:Q42537918-FC812D42-BCB7-41C0-866D-3FA4813D03AF wds:Q64104438-1EEDCAEE-1DD1-4B6A-B032-A5E1932966B3 wds:Q44582838-F7ACC503-F07B-4F24-8A7D-24BD7F84FD0D wds:Q43658612-62940C25-C008-4D0B-AB6D-3E8D83B4F6BA wds:Q28834453-1EEBFCE0-3D8E-48B7-BB5F-F0DCCD3AAAC0 wds:Q90698683-C136F61E-A4FE-47D3-9024-E682EAEA9D0D wds:Q36338943-A0E56AD8-B3D2-4EFF-9355-1BFEF9432F93

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