About: Complementary resistive switching in tantalum oxide-based resistive memory devices

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scholarly article by Yuchao Yang et al published 14 May 2012 in Applied Physics Letters

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) article scientifique publié en 2012 (fr) наукова стаття, опублікована в травні 2012 (uk) im Mai 2012 veröffentlichter wissenschaftlicher Artikel (de) scholarly article by Yuchao Yang et al published 14 May 2012 in Applied Physics Letters (en)
publication date	wds:Q59445043-93215C45-F656-42F3-9926-14151E0AAFCD
publication date	2012-05-14 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q59445043-CA324234-3C68-40A1-8C90-88BCEDF5770B
language of work or name	English
author name string	wds:Q59445043-1C6EC38E-6605-4605-BB4A-EF2A3862C96C wds:Q59445043-BEEDBD73-00A2-4EA2-83D4-282576751FE8
author name string	Patrick Sheridan Yuchao Yang
rdfs:label	Complementary resistive switching in tantalum oxide-based resistive memory devices (en) Complementary resistive switching in tantalum oxide-based resistive memory devices (nl)
skos:prefLabel	Complementary resistive switching in tantalum oxide-based resistive memory devices (en) Complementary resistive switching in tantalum oxide-based resistive memory devices (nl)
name	Complementary resistive switching in tantalum oxide-based resistive memory devices (en) Complementary resistive switching in tantalum oxide-based resistive memory devices (nl)
author	wds:Q59445043-8E7B0652-C132-4420-BD90-521A73DED951
author	Wei Lu
title	wds:Q59445043-544217A7-C846-4808-A9C5-F27605D7A915
title	Complementary resistive switching in tantalum oxide-based resistive memory devices (en)
page(s)	wds:Q59445043-F2A36283-8F2E-47B9-B4C9-E163F14C0AFC
page(s)	203112
instance of	wds:Q59445043-44BC0426-8FE1-4F12-BB40-4AFD2F9A20E9
instance of	scholarly article
main subject	wds:Q59445043-AB3CEB1B-8116-409F-A08B-3EA573F4CAE1
main subject	tantalum
published in	wds:Q59445043-0549F96B-FB34-403D-9EEC-D267F9C589BF
published in	Applied Physics Letters
issue	wds:Q59445043-30D64E1D-90F1-4450-AC97-03602F928B2A
volume	wds:Q59445043-A316387D-CE22-45C5-BBF1-A58A99CF345D
issue	20
volume	100
DOI	wds:Q59445043-E75D85BB-E837-464F-9327-12151A40EFA6
DOI	http://dx.doi.org/10.1063/1.4719198
DOI	10.1063/1.4719198
arXiv ID	wds:Q59445043-94A36D49-080D-4642-A520-FB8A44A249F9
arXiv ID	1204.3515
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q59445043
is cites work of	Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2. Data Clustering using Memristor Networks Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors Self-selective van der Waals heterostructures for large scale memory array Resistive Switching in Oxides AHaH computing-from metastable switches to attractors to machine learning Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
is cites work of	wds:Q92002740-552736E1-0594-4562-B282-C2658CAF103A wds:Q58811917-A64B0F83-282D-423F-950E-BF4C91538928 wds:Q21132363-6C22030D-3550-49FA-9FD7-AC6EA911DBAF wds:Q48205323-C05D7711-2571-48D7-B8EA-D0ABC8C749EC wds:Q97539432-AD44194E-4B26-4DD9-81A0-79AFC0F19531 wds:Q28315015-F4013304-BADB-4B77-9615-CF74FE43E122 wds:Q33780932-6824117E-F408-4B35-9E20-11EB78559B70

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