About: Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth

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article by Anders Kristensen et al published July 1998 in Solid-State Electronics

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в липні 1998 (uk) article scientifique publié en 1998 (fr) im Juli 1998 veröffentlichter wissenschaftlicher Artikel (de) article by Anders Kristensen et al published July 1998 in Solid-State Electronics (en)
publication date	wds:Q59443550-DF8923FB-D48A-4146-A3F5-CA3DCDB3A442
publication date	1998-07-01 00:00:00Z (xsd:dateTime)
cites work	wds:Q59443550-1D6FE78E-2DB8-4EF8-B19A-1E045E8ABFA8 wds:Q59443550-26B06631-AD4C-4F14-AC89-33C3608F8638 wds:Q59443550-36D1F21C-D415-4467-82F5-FA91E985F4F7 wds:Q59443550-C14E277D-6A35-42E4-AC84-A7C46821287B wds:Q59443550-DF442759-A1E5-482A-8203-025FBD825453
cites work	Length dependence of quantized conductance in ballistic constrictions fabricated on InAs/AlSb quantum wells Nonuniversal Conductance Quantization in Quantum Wires Ballistic transport in one dimension: additional quantisation produced by an electric field Ballistic transport in one‐dimensional constrictions formed in deep two‐dimensional electron gases Chapter 2: Quantum Point Contacts
author name string	wds:Q59443550-249E429E-A1FA-4803-A1E9-382C5FBF6CC1 wds:Q59443550-4211D699-0199-43D0-BC64-85E4123D6718 wds:Q59443550-4A8544A1-3681-4884-8287-0AA12B4576C6 wds:Q59443550-5199A475-FDDA-4C2E-9AA0-9F29DC0BF28E wds:Q59443550-898078D8-F406-45DD-BD8F-BBA22BB014FF wds:Q59443550-E9087263-D4C9-40F0-8B97-D30610857BFB
author name string	M Michel C.B SØrensen F Beuscher J.Bo Jensen M Zaffalon P.E Lindelof
rdfs:label	Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth (en) Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth (nl)
skos:prefLabel	Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth (en) Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth (nl)
name	Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth (en) Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth (nl)
author	wds:Q59443550-21FD7C61-9574-4966-BF6B-476C8828B8FA wds:Q59443550-55813886-70A8-4770-9A6C-FDC318B81A1E wds:Q59443550-DB65501C-634C-4FE7-A480-C57A7F72B163
author	Alfred Forchel Jesper Nygård Anders Kristensen
title	wds:Q59443550-C2F087A7-3026-4C6D-8638-4ADD0A71E6DA
title	Quantum point contacts formed in GaAs/GaAlAs heterostructures by shallow etching and overgrowth (en)
page(s)	wds:Q59443550-B43CDBC1-1CFF-4CD3-9FED-EBF591496A16
page(s)	1103-1107
instance of	wds:Q59443550-D5031159-844A-491F-8BAA-A8368F13084F
instance of	scholarly article
published in	wds:Q59443550-CDCCE2A3-0BAA-4518-A54F-8DFB57EF6EC5
published in	Solid-State Electronics
issue	wds:Q59443550-CD3F78BB-D3B1-4952-9DA6-3C798C10B22E
volume	wds:Q59443550-A11FA6FB-1A32-4EF8-991E-49455FCC11CE
issue	7-8
volume	42
DOI	wds:Q59443550-468A6683-B2FE-4DB7-9D3F-685BFF0DF56B
DOI	http://dx.doi.org/10.1016/S0038-1101(97)00310-9
DOI	10.1016/S0038-1101(97)00310-9
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q59443550

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