About: Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition

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article by H.Y Peng et al published September 2000 in Chemical Physics Letters

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована у вересні 2000 (uk) im September 2000 veröffentlichter wissenschaftlicher Artikel (de) article by H.Y Peng et al published September 2000 in Chemical Physics Letters (en)
publication date	wds:Q58622280-060AD646-457D-4451-9EE5-D48181D1A710
publication date	2000-09-01 00:00:00Z (xsd:dateTime)
cites work	wds:Q58622280-117B3D08-7E5D-49EB-98D9-88EE0458BBD4 wds:Q58622280-29CCB4AB-D76E-4CB5-A6CA-FF3CAD233D30 wds:Q58622280-3498B1B9-96C9-40C1-91C3-5B3F0556E2C6 wds:Q58622280-5D590336-B882-4A10-BF6E-8CF584D3B026 wds:Q58622280-964072B2-E539-4C7F-8B5A-85B0AB8FCA94 wds:Q58622280-A2BBE461-C4B5-4461-9397-776649D8CC90 wds:Q58622280-D56F8DAF-927C-4D7D-BFA6-9B5880334CBF wds:Q58622280-F39C21B9-DAA5-450F-896C-C837AEF5051B
cites work	Helical microtubules of graphitic carbon Control of thickness and orientation of solution-grown silicon nanowires A laser ablation method for the synthesis of crystalline semiconductor nanowires Transmission electron microscopy evidence of the defect structure in Si nanowires synthesized by laser ablation Synthesis and characterization of carbide nanorods β-SiC nanorods synthesized by hot filament chemical vapor deposition Growth ofc‐axis oriented gallium nitride thin films on an amorphous substrate by the liquid‐target pulsed laser deposition technique A Benzene-Thermal Synthetic Route to Nanocrystalline GaN
author name string	wds:Q58622280-06713672-2D46-48BE-A0F4-76692404EF72 wds:Q58622280-35E5A454-963D-4F24-BD41-E7EA81A73EE1 wds:Q58622280-8FF44B8A-DAA3-416E-9F75-E2A2A25E6A5B wds:Q58622280-BE601C5F-D3AC-4273-93A7-5C065D29E893 wds:Q58622280-C3B535D1-934A-49B5-88E4-723626E19DC8 wds:Q58622280-D6B18D20-A32C-48B7-A5D2-783F0C3674ED wds:Q58622280-F5BB744C-E158-496A-9E4F-BC5E2FC04EA5 wds:Q58622280-FA0832C7-DC35-4EB4-9D4B-AFC395F76241
author name string	N Wang C.S Lee S.T Lee H.Y Peng L.S Liao W.S Shi X.T Zhou Y.F Zheng
rdfs:label	Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition (en) Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition (nl)
skos:prefLabel	Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition (en) Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition (nl)
name	Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition (en) Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition (nl)
title	wds:Q58622280-49054C62-E627-4E63-8E2B-66976AF5C221
title	Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition (en)
page(s)	wds:Q58622280-E98667E2-DA3E-4F1F-BA11-044E08679F05
page(s)	263-270
instance of	wds:Q58622280-57313F98-2AD8-4E44-B10D-16EC16DF5849
instance of	scholarly article
main subject	wds:Q58622280-0118EF7E-EC02-40B7-8D4A-E49B32BBF197
main subject	nanowire
published in	wds:Q58622280-7A180489-E0B1-4C70-AFB8-3E0189E0FDA6
published in	Chemical Physics Letters
issue	wds:Q58622280-EC88E266-CE04-4495-9E4A-BF15A5DDE849
volume	wds:Q58622280-BBA911CD-E7CA-4A3A-B363-9AB68FAC93BD
issue	5-6
volume	327
DOI	wds:Q58622280-78FAE785-92DD-4F2D-8AB5-96445BAA3B44
DOI	http://dx.doi.org/10.1016/S0009-2614(00)00872-1
DOI	10.1016/S0009-2614(00)00872-1
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q58622280
is cites work of	Effect of the polar surface on GaN nanostructure morphology and growth orientation Control of growth orientation of GaN nanowires INORGANIC SEMICONDUCTOR NANOWIRES Self-catalysis: a contamination-free, substrate-free growth mechanism for single-crystal nanowire and nanotube growth by chemical vapor deposition. Microstructures of gallium nitride nanowires synthesized by oxide-assisted method Gallium nitride nanowires doped with silicon Carbon monoxide-assisted growth of carbon nanotubes Pyrolysis approach to the synthesis of gallium nitride nanorods Growth and Characterization of High-Quality GaN Nanowires on PZnO and PGaN by Thermal Evaporation Generation of Charged Nanoparticles During the Synthesis of GaN Nanostructures by Atmospheric-Pressure Chemical Vapor Deposition
is cites work of	wds:Q51134815-8A45EBFC-7D8B-48B6-912C-006252FDC540 wds:Q58040072-666618E9-D62E-4DB6-A772-07E96052BA91 wds:Q57676787-1185D52B-E271-4675-92D1-2C7F4031B9C2 wds:Q58621693-D05BF71C-05D3-408B-AEF6-EE444AFD8FAF wds:Q58621865-813058DB-E916-47C2-BE61-F6D7C14C6429 wds:Q58622046-71873E35-2C66-4573-901A-96D5B1098B55 wds:Q58690921-FE55FA87-14B9-4EA4-8601-185C614CC81E wds:Q58621952-A33D57A3-789F-481B-94B9-DD4AE058A8BF wds:Q58096323-E5228572-218A-4E40-905B-173350008E3A wds:Q62474037-F8F6D2FD-A0FE-48F4-9EDE-F5A33FF06517

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