About: Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons

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rdf:type	Item
description	article (en) հոդված (hy) wetenschappelijk artikel (nl) article scientifique publié en 2009 (fr) наукова стаття, опублікована в грудні 2009 (uk) im Dezember 2009 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q58621482-57DCC58B-75C7-44BD-BD9C-D072FB6B741C
publication date	2009-12-21 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q58621482-A87C255E-B5C3-4988-A598-70080665A690
language of work or name	English
cites work	wds:Q58621482-08793983-0925-47E8-B48D-DBABAD5D1BF4 wds:Q58621482-0AFC7EAD-09D1-4D2D-984C-73DDDE84411A wds:Q58621482-4E42AB43-323A-433C-BE94-A9F569FB074B wds:Q58621482-4E54C3F5-F78E-4ED0-91D1-0E94177FD3E7 wds:Q58621482-73CF2A97-01F4-4A9C-BBDA-89B0C5C444A5 wds:Q58621482-77B19ADF-FB1F-46DC-992B-62D87C838361 wds:Q58621482-D3993348-2160-40B1-89EE-B0FAC332494E wds:Q58621482-F17FC2CB-20CD-4355-8BBE-57E0F0781289 wds:Q58621482-F66B168D-3B16-46BA-BEDC-9940C508151C
cites work	A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology A 160-kilobit molecular electronic memory patterned at 10(11) bits per square centimetre Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices Bottom-up assembly of large-area nanowire resonator arrays. Nanoelectronics from the bottom up. Frontiers of silicon-on-insulator Tuning electrical and photoelectrical properties of CdSe nanowires via indium doping. Heterointerfaces in semiconductor nanowires Logic gates and computation from assembled nanowire building blocks.
author name string	wds:Q58621482-0DB38D87-9740-4E48-A25E-20C242C8E321 wds:Q58621482-3F62F2F1-8457-4911-9852-D81455578487 wds:Q58621482-774D899C-E52B-4BD0-B1F4-F97C83C6224B wds:Q58621482-84211116-2D6D-4541-915D-97CB81795AB8 wds:Q58621482-A59BAAFB-1540-464B-9E20-DE667C4E1465 wds:Q58621482-B41503F3-224A-4076-B296-1775CB23451F wds:Q58621482-D5CE405D-2346-4019-AFC1-F15808CCE209 wds:Q58621482-E94F2152-277A-4C8D-8192-EDE797BA6C45 wds:Q58621482-F96DFB2B-A68D-4A7A-80E2-76990D271D31
author name string	C. S. Lee S. T. Lee H. B. Wang H. S. Song I. Bello W. J. Zhang Y. B. Tang Y. L. Cao Z. B. He
rdfs:label	Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons (en) Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons (nl)
skos:prefLabel	Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons (en) Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons (nl)
name	Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons (en) Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons (nl)
title	wds:Q58621482-74DD3E29-B239-4401-B055-0E2C65E2375B
title	Crossbar heterojunction field effect transistors of CdSe:In nanowires and Si nanoribbons (en)
page(s)	wds:Q58621482-D47782B3-D985-472A-884C-F373C6572532
page(s)	253107
instance of	wds:Q58621482-336D50AA-8CA5-4CBE-88A4-C699713390ED
instance of	scholarly article
main subject	wds:Q58621482-305396E7-1C76-457C-BAF5-BB5C883C8D2E wds:Q58621482-A4EB1505-B757-447A-B45D-559CFAA93DE4
main subject	nanowire field-effect transistor
published in	wds:Q58621482-6112DD9C-0062-4E8C-A9D8-33D319E99538
published in	Applied Physics Letters
issue	wds:Q58621482-31AC4A32-260E-4153-8635-FDAA84F29670
volume	wds:Q58621482-A1F9AABF-9252-4486-9876-FB5E98D269A9
issue	25
volume	95
DOI	wds:Q58621482-4AB1C68C-FB5C-4BF2-BB74-1DDFBACDD4E4
DOI	http://dx.doi.org/10.1063/1.3275715
DOI	10.1063/1.3275715
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q58621482

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