About: Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells

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scholarly article in Physical Review B, vol. 73 no. 12, March 2006

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) article scientifique publié en 2006 (fr) наукова стаття, опублікована в березні 2006 (uk) im März 2006 veröffentlichter wissenschaftlicher Artikel (de) scholarly article in Physical Review B, vol. 73 no. 12, March 2006 (en)
publication date	wds:Q58463684-A1C29CE3-1A2F-40B3-840A-F181AD493601
publication date	2006-03-30 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q58463684-76CFF58E-47E7-42B5-A58B-BDA57F8A15EE
language of work or name	English
cites work	wds:Q58463684-1266F1F8-CA4A-483D-AAA1-B8D5C03F70B5 wds:Q58463684-4EDC243C-806C-449D-81FC-4CC27EC4C1FD wds:Q58463684-72262B1D-94CD-4786-90A7-2B2927D551D5 wds:Q58463684-864BA12C-BA3B-4485-A2FE-64B0887A8E90
cites work	Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy
author name string	wds:Q58463684-03924CF3-1196-4460-966F-2E937636A2E4 wds:Q58463684-187510D3-3F6C-462C-A41D-4081043A0AFF wds:Q58463684-61BC94B5-ECAE-42D5-867E-2BC2BCD346F3 wds:Q58463684-B3EDF95A-5432-4B88-88C0-25C437E253D1 wds:Q58463684-BFBFF57C-3CCC-4D5D-B717-6AA8E100E898 wds:Q58463684-D5F0FB69-A7BB-4968-9A26-673A40E5B414 wds:Q58463684-E06D4FE0-8C97-4EE6-A5DB-7DE173B4CE5A wds:Q58463684-EF96F6D1-0454-4B8A-A44B-C58FB14F26BF
author name string	M. Albrecht E. Bellet-Amalric F. Guillot F. H. Julien L. Doyennette L. Nevou E. Warde T. Remmele
rdfs:label	Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells (en) Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells (nl)
skos:prefLabel	Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells (en) Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells (nl)
name	Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells (en) Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells (nl)
author	wds:Q58463684-D05B016E-928F-4142-B058-57E0D1FAE4BE wds:Q58463684-D8F4119D-CC73-4587-AA70-10C1BC66CE50
author	Maria Tchernycheva Eva Monroy
title	wds:Q58463684-75ED55B3-9B28-4CE5-B4BA-AA10BED29B96
title	Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells (en)
instance of	wds:Q58463684-8895FC92-F0FD-46E3-99AF-A83C56593195
instance of	scholarly article
published in	wds:Q58463684-C9DA614B-10B3-4DED-91B6-A67E8E2F0BCC
published in	Physical Review B
issue	wds:Q58463684-54506721-4EA7-4F1A-9F38-2CF18A2A0B5B
volume	wds:Q58463684-99889EB8-2C3C-4DD0-B7A0-361D79E10F14
issue	12
volume	73
DOI	wds:Q58463684-138BDC8B-E859-40EC-B2FE-2C53CE93E860
DOI	http://dx.doi.org/10.1103/PHYSREVB.73.125347
DOI	10.1103/PHYSREVB.73.125347
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q58463684
is cites work of	Terahertz intersubband absorption in GaN/AlGaN step quantum wells GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures Homogeneous linewidth of the intraband transition at 1.55 μm in GaN/AlN quantum dots Photocurrent spectroscopy of bound-to-bound intraband transitions in GaN/AlN quantum dots Strain relaxation in short-period polar GaN/AlN superlattices Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells Long-lived excitons in GaN/AlN nanowire heterostructures Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities Observation of hot luminescence and slow inter-sub-band relaxation in Si-doped GaN∕AlxGa1−xN (x=0.11, 0.25) multi-quantum-well structures III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm Intersubband spectroscopy probing higher order interminiband transitions in AlN-GaN-based superlattices Short wavelength (λ=2.13μm) intersubband luminescence from GaN∕AlN quantum wells at room temperature Intersubband resonant enhancement of second-harmonic generation in GaN∕AlN quantum wells Second-order piezoelectricity in wurtzite III-N semiconductors GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells Intersubband Transition in GaN/InGaN Multiple Quantum Wells. Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones
is cites work of	wds:Q58463424-CF3C8A87-CB5B-429B-80EA-4863911E4DCD wds:Q58463489-2E697DB7-BF30-4FD1-992E-26C79ED0A88F wds:Q58463503-7CED0337-294F-446C-8217-455F55F1C950 wds:Q58463157-564E717A-60FB-4DA3-8DD9-B897753173FA wds:Q56925853-D1619464-527A-4EFF-8CEA-028AD9C5FCDB wds:Q58417858-9C2F1046-30E4-4248-A091-214872E66DEB wds:Q58463649-75B4E980-D5D4-4B07-BC18-08E74481054E wds:Q58463671-7DC58162-AA73-4B02-85E0-41D1CE6D6A9C wds:Q58463106-0A4B9601-1C75-4F57-9659-CF2FCA96329F wds:Q58463396-C4B273CC-79C4-4560-A0E3-23C5975BEA06 wds:Q58463558-FAF27D0B-FC10-49C3-9AC1-FFFA55D09BDB wds:Q58463591-B03A8D50-89C7-439F-83AA-A0AEB6856F3E wds:Q58463636-5DAC68A8-1D15-472D-9B84-A4319E8DE1F7

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