About: Mark Hopkinson

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Mark Hopkinson Goto Sponge NotDistinct Permalink

An Entity of Type : wikibase:Item, within Data Space : wikidata.demo.openlinksw.com associated with source document(s)

physicist at University of Sheffield

Attributes	Values
rdf:type	Item
description	wetenschapper (nl) дослідник (uk) physicist at University of Sheffield (en)
rdfs:label	Mark Hopkinson (en) M. Hopkinson (nl) Mark Hopkinson (es) Mark Hopkinson (sq)
skos:prefLabel	Mark Hopkinson (en) M. Hopkinson (nl) Mark Hopkinson (es) Mark Hopkinson (sq)
name	Mark Hopkinson (en) M. Hopkinson (nl) Mark Hopkinson (es) Mark Hopkinson (sq)
Scopus author ID	wds:Q58451290-143860FB-BE52-4C61-88D4-FC8C4B627E4B
Scopus author ID	36041532400
given name	wds:Q58451290-37C19A32-9598-4F79-B601-3C04F8040DD2
given name	Mark
instance of	wds:Q58451290-876402FD-D74B-4E2A-B5B5-52EFF638BE79
instance of	Homo sapiens
occupation	wds:Q58451290-63698777-2A46-4D4B-AFEA-FCCF2CAEB61D
employer	wds:Q58451290-15F76F49-C75B-4097-ABCF-0B3FD108179F wds:Q58451290-1CCF98A0-B5E2-4AB6-841F-030D6611F4C8 wds:Q58451290-33FFD726-8FBC-4A85-AE3C-81CE6A69FF57 wds:Q58451290-846A88C2-D125-4F3E-AAE4-39B5C7663B1B wds:Q58451290-84DD5226-620F-4192-9872-70450C86B210
sex or gender	wds:Q58451290-E8EEACC4-4719-48F7-BCD2-D58AA9212E7E
DBLP author ID	wds:Q58451290-C264B7F9-AA31-4E7F-A902-455F71785C35
educated at	wds:Q58451290-07D24EC9-12E5-44C0-AC3A-993B5C6DAD07 wds:Q58451290-15B4E2CC-38AA-4EF0-A9F2-978917213A8C
family name	wds:Q58451290-86BF3ED7-1CEE-4610-B3AB-67F2E4381F8B
DBLP author ID	https://dblp.org/pid/28/3292.rdf
occupation	physicist
employer	University of Warwick University of Sheffield
sex or gender	male
DBLP author ID	28/3292
educated at	University of Birmingham University of Sheffield
family name	Hopkinson
ORCID iD	wds:Q58451290-E253FB57-B23E-4785-96A3-FA3CF9BB8EEB
ORCID iD	https://orcid.org/0000-0002-8097-6913
ORCID iD	0000-0002-8097-6913
Gateway to Research person ID	wds:Q58451290-4485069E-1336-4D99-B5D7-22B0F6093902
Gateway to Research person ID	761AA5B7-F86F-4DC0-9351-D4E33D48DD6F
ResearcherID	wds:Q58451290-A8922DE4-6FB6-43D1-88AF-DC2C0F6BC498
ResearcherID	H-8239-2012
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q58451290
is author of	Nature of the Stranski-Krastanow Transition during Epitaxy of InGaAs on GaAs Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer Single photon sources based upon single quantum dots in semiconductor microcavity pillars Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy Charged and neutral exciton complexes in individual self-assembledIn(Ga)Asquantum dots Fast Optical Preparation, Control, and Readout of a Single Quantum Dot Spin Individual neutral and chargedInxGa1−xAs−GaAsquantum dots with strong in-plane optical anisotropy Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation. Structural analysis of strained quantum dots using nuclear magnetic resonance InGaAs∕AlAsSb∕InP quantum cascade lasers operating at wavelengths close to 3μm Stark shift of the spectral response in quantum dots-in-a-well infrared photodetectors Population Inversion in a Single InGaAs Quantum Dot Using the Method of Adiabatic Rapid Passage Whispering gallery modes in quantum dot micropillar cavities Control of polarized single quantum dot emission in high-quality-factor microcavity pillars Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4Asquantum dots Excited states and selection rules in self-assembled InAs/GaAs quantum dots Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs Influence of structure and defects on the performance of dot-in-well laser structures Structural and optical properties of high In and N content GaInNAs quantum wells Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy Optical orientation and control of spin memory in individual InGaAs quantum dots Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots Magneto-optical studies of self-organized InAs/GaAs quantum dots Laser Location and Manipulation of a Single Quantum Tunneling Channel in an InAs Quantum Dot Excitation and Relaxation Mechanisms in Single In(Ga)As Quantum Dots Towards coherent optical control of a single hole spin: Rabi rotation of a trion conditional on the spin state of the hole Controlled Rotation (C-ROT) Gate in a Single Self- Assembled Quantum Dot Coherent response of a quantum dot exciton driven by a rectangular spectrum optical pulse Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials Nuclear Spin Switch in Semiconductor Quantum Dots Effect of GaAs polycrystal on the size and areal density of InAs quantum dots in selective area molecular beam epitaxy High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents Lasing and spontaneous emission characteristics of 1.3μm In(Ga)As quantum-dot lasers Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy Improved performance from GaAs–AlGaAs quantum cascade lasers with enhanced upper laser level confinement Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers Photoluminescence spectroscopy of intersubband population inversion in aGaAs/AlxGa1−xAstriple-barrier tunneling structure Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots Mobility and saturation drift velocity enhancement in highly doped GaAs and InxGa1–xAs structures designed for use in power FET devices Solid‐source molecular beam epitaxy growth of GaInP and GaInP‐containing quantum wells Mechanism for improvements of optical properties of 1.3-μm InAs∕GaAs quantum dots by a combined InAlAs–InGaAs cap layer Element-sensitive measurement of the hole–nuclear spin interaction in quantum dots Investigations of 1.55-μm GaInNAs/GaAs heterostructures by optical spectroscopy

Faceted Search & Find service v1.16.117 as of May 05 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3239 as of May 5 2024, on Linux (x86_64-centos_6-linux-gnu), Single-Server Edition (378 GB total memory, 188 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software