About: Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement

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rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована у 2018 (uk) article scientifique publié en 2018 (fr) im Jahr 2018 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q58414696-2D8B1AD6-767B-4468-BA7A-54AA06BA5331
publication date	2018-01-01 00:00:00Z (xsd:dateTime)
author name string	wds:Q58414696-06107B87-9A59-4600-B2CB-6171987CCF97 wds:Q58414696-2C6C3A45-BAF3-4A77-B479-2F79C6D5D98D wds:Q58414696-AA238E2A-59F1-4B19-A937-1C4B736503C6 wds:Q58414696-D77267F9-A0B3-4B33-BBBD-6DC3FF4CCDC8 wds:Q58414696-E93B5E67-5F21-4F67-844C-59B2ED73A49B
author name string	Gaurav Kumar Arun Barvat B. Choursia Kritika Anand Nisha Prakash
rdfs:label	Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement (en) Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement (nl) Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement (en-gb)
skos:prefLabel	Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement (en) Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement (nl) Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement (en-gb)
name	Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement (en) Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement (nl) Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement (en-gb)
author	wds:Q58414696-05EC2D0B-94C0-453F-A9B1-715BC68910CF wds:Q58414696-320BE627-1E5C-41D0-A008-A9D86E6F0E2F
author	Suraj P Khanna Prabir Pal
title	wds:Q58414696-1A04711D-6E8F-4C6A-9738-586CC48F3D59
title	Exploration of Trap Levels in GaN and Al 0.2 Ga 0.8 N Layers by Temperature-Dependent Photoconductivity Measurement (en)
page(s)	wds:Q58414696-5822A415-160E-4D34-BC7F-56B026718790
page(s)	2132-2138
instance of	wds:Q58414696-C5E995F2-3B1A-4C0B-84E0-55314E3420C0
instance of	scholarly article
main subject	wds:Q58414696-607BA7C2-B202-4E71-B36E-6965EB0C837F
main subject	photoconductivity
published in	wds:Q58414696-53B848E4-1CF3-4171-AD96-E5DDF6607052
published in	Materials Today : proceedings
issue	wds:Q58414696-392FC2A6-3D17-4A26-B3EE-5ACC7F78315B
volume	wds:Q58414696-C2ABD6B7-4572-40A2-8D60-502F19395F12
issue	1
volume	5
DOI	wds:Q58414696-6C107B01-D293-411E-AE25-A916BBF3CBEC
DOI	http://dx.doi.org/10.1016/J.MATPR.2017.09.210
DOI	10.1016/J.MATPR.2017.09.210
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q58414696

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