About: Interface compound formation and dependence on In‐layer thickness in Ni/In thin‐film systems

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About: Interface compound formation and dependence on In‐layer thickness in Ni/In thin‐film systems Goto Sponge NotDistinct Permalink

An Entity of Type : wikibase:Item, within Data Space : wikidata.demo.openlinksw.com associated with source document(s)

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в червні 1991 (uk) im Juni 1991 veröffentlichter wissenschaftlicher Artikel (de)
publication date	wds:Q58216722-09E9394F-AA29-4B4E-91ED-7E6B863DD45B
publication date	1991-06-24 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q58216722-2AB10DD0-5120-4D84-A2B5-4B96E532BFC7
language of work or name	English
cites work	wds:Q58216722-444006C3-D674-4280-AE6F-AF0530FBD4B9
cites work	Isolated indium atoms on copper surfaces: A perturbed γ-γ angular correlation study
author name string	wds:Q58216722-1A6CB2B1-B8E8-4A52-B437-9AB8435C6606 wds:Q58216722-2760F63D-AEDE-40FE-846D-DD21129B4856 wds:Q58216722-58E76698-FB4A-4D9B-A78A-4A93E7784B00 wds:Q58216722-5D421A34-7483-4F24-A1FE-772D305F6F5E wds:Q58216722-8209900E-207D-440E-B9E7-F4ADC56CDBDC wds:Q58216722-E7E482F9-65B0-472B-BE6F-8E568EEBA09B wds:Q58216722-FD79A35F-F545-4498-A75A-6D7CEB68FD66
author name string	R. Fink G. Schatz J. Voigt B. Luckscheiter R. Platzer U. Wöhrmann X. L. Ding
rdfs:label	Interface compound formation and dependence on In‐layer thickness in Ni/In thin‐film systems (en) Interface compound formation and dependence on In‐layer thickness in Ni/In thin‐film systems (nl)
skos:prefLabel	Interface compound formation and dependence on In‐layer thickness in Ni/In thin‐film systems (en) Interface compound formation and dependence on In‐layer thickness in Ni/In thin‐film systems (nl)
name	Interface compound formation and dependence on In‐layer thickness in Ni/In thin‐film systems (en) Interface compound formation and dependence on In‐layer thickness in Ni/In thin‐film systems (nl)
author	wds:Q58216722-01829897-9A1D-441E-863F-493246F0EEE1
author	Georg Krausch
title	wds:Q58216722-2DA9D95C-77B2-4729-A2D9-B871533B4A9E
title	Interface compound formation and dependence on In‐layer thickness in Ni/In thin‐film systems (en)
page(s)	wds:Q58216722-36D39A0F-AE01-4D25-B049-4983947FC325
page(s)	2904-2906
instance of	wds:Q58216722-F4D11369-ECEB-4948-8B70-D1F3703F31F2
instance of	scholarly article
main subject	wds:Q58216722-8D1C2A00-D7BD-42AC-993D-E2F291724361
main subject	thin film
published in	wds:Q58216722-88BF88A8-B84B-45C8-A23F-658E7AB8CAEB
published in	Applied Physics Letters
issue	wds:Q58216722-8DBCA531-B4F4-49C6-A657-F8735382D399
volume	wds:Q58216722-13FB2A63-C1B1-443C-9517-8763AFF16085
issue	25
volume	58
DOI	wds:Q58216722-F25C0D3B-5AC7-4A93-844D-9164C8818F4D
DOI	http://dx.doi.org/10.1063/1.104717
DOI	10.1063/1.104717
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q58216722
is cites work of	Binding and mobility of isolated indium atoms on Si(111)7×7 Formation of an ultrathin amorphous layer at In/Pd interfaces observed by local and nonlocal techniques
is cites work of	wds:Q58216717-F1961F75-A7FE-4BF9-9432-4543058468E3 wds:Q58216683-40E71360-B345-470E-8411-6DF327D46753

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