About: Nonlinear charging effect of quantum dots in ap−i−ndiode

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scholarly article in Physical Review B, vol. 68 no. 12, September 2003

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована у вересні 2003 (uk) im September 2003 veröffentlichter wissenschaftlicher Artikel (de) article scientifique publié en 2003 (fr) scholarly article in Physical Review B, vol. 68 no. 12, September 2003 (en)
publication date	wds:Q58072129-FDF2456B-72C4-4253-A71E-3B453794B087
publication date	2003-09-29 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q58072129-FCC39144-DC73-4B17-B06B-2F0DA97946F6
language of work or name	English
cites work	wds:Q58072129-1FE5BB32-11AE-4321-A3AC-8BC6F80B63BB wds:Q58072129-264A4314-CD46-48E7-BFFB-F703ADF907B2 wds:Q58072129-407FC9D6-C600-452A-9499-903FD71E801B wds:Q58072129-7B12149D-E874-4B89-9531-37B8E759AE2E wds:Q58072129-90C38296-18EC-403B-A68F-DC0EFC70E8AA wds:Q58072129-BC74A3DA-2749-4157-A017-86D4B08B575D wds:Q58072129-BD9EBFD2-61A2-4A3B-B6EB-39A71CB243B8 wds:Q58072129-D1A1AF5D-CD1D-4007-A0F5-E718AA02F99C wds:Q58072129-DAD6FC77-E65A-4318-A907-06AF2C341234
cites work	Electronic properties of two-dimensional systems Theory of Coulomb-blockade oscillations in the conductance of a quantum dot Observation of intrinsic bistability in resonant tunnelling devices Observation of intrinsic tristability in a resonant tunneling structure Intrinsic bistability in the electroluminescence spectrum and current-voltage characteristics of triple-barrier p-i-n resonant tunneling devices Observation of intrinsic bistability in resonant tunneling structures Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory Theory of single-electron charging of quantum wells and dots Elastic and inelastic scattering in quantum dots in the Coulomb-blockade regime
author name string	wds:Q58072129-3E8AC04C-13BA-4227-8461-DDF845839E0B wds:Q58072129-4063EB15-6099-4D5C-B2C9-21E0714D4ED2 wds:Q58072129-4F395206-B2F5-472F-9057-2C9478F0D440 wds:Q58072129-9F4E0286-9ADD-43E9-99CB-60B71354022B wds:Q58072129-A1FF4AD3-2232-4520-A8E4-C485724C4394 wds:Q58072129-C0D192F1-3621-4237-B27C-883C03C689F1 wds:Q58072129-C534AB25-F396-44F2-875A-DCB17CC358CB
author name string	N. Klein A. Förster A. E. Belyaev S. A. Vitusevich E. Schöll G. Kießlich S. V. Danylyuk
rdfs:label	Nonlinear charging effect of quantum dots in ap−i−ndiode (en) Nonlinear charging effect of quantum dots in ap−i−ndiode (nl)
skos:prefLabel	Nonlinear charging effect of quantum dots in ap−i−ndiode (en) Nonlinear charging effect of quantum dots in ap−i−ndiode (nl)
name	Nonlinear charging effect of quantum dots in ap−i−ndiode (en) Nonlinear charging effect of quantum dots in ap−i−ndiode (nl)
author	wds:Q58072129-270E949B-9A0E-47B1-8A9A-19B6420A8242 wds:Q58072129-74F0D08A-8BE8-4314-A4BB-49B445C98BB7
author	Mohamed Henini Andreas Wacker
title	wds:Q58072129-20B96CA0-4041-4655-BB23-449B88F57496
title	Nonlinear charging effect of quantum dots in ap−i−ndiode (en)
instance of	wds:Q58072129-6AA6D3D9-FC1B-4A06-9383-0DACA19510B2
instance of	scholarly article
main subject	wds:Q58072129-9FF299E5-6E15-483C-8F5A-FE5C65F0ECE7
main subject	quantum dot
published in	wds:Q58072129-E7161476-B8F0-48C2-95B7-DE3DAFD31927
published in	Physical Review B
issue	wds:Q58072129-836629C4-7C19-441E-88B9-5B339CF3E478
volume	wds:Q58072129-1D3DABCB-2E75-44EA-9D4E-FEFD38E88A92
issue	12
volume	68
DOI	wds:Q58072129-D938981E-A7D7-431F-9EE1-462950ADDDA8
DOI	http://dx.doi.org/10.1103/PHYSREVB.68.125331
DOI	10.1103/PHYSREVB.68.125331
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q58072129
is cites work of	Optical imaging of electrical carrier injection into individual InAs quantum dots. Electrically driven single InGaN/GaN quantum dot emission
is cites work of	wds:Q53079222-BFD2736F-A52A-4B66-BDED-EB609B2E472D wds:Q56560857-62347A80-5178-4625-B88E-D518859FAAF6

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