About: Intrinsic excitonic photoluminescence and band-gap engineering of wide-gapp-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys

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About: Intrinsic excitonic photoluminescence and band-gap engineering of wide-gapp-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys Goto Sponge NotDistinct Permalink

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Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в листопаді 2003 (uk) im November 2003 veröffentlichter wissenschaftlicher Artikel (de) article scientifique publié en 2003 (fr)
publication date	wds:Q57837657-D07BF60A-3923-4073-A141-CC4178F1C97A
publication date	2003-11-01 00:00:00Z (xsd:dateTime)
cites work	wds:Q57837657-39F50338-0897-4B68-BB8D-BEBAA7412B63 wds:Q57837657-513F4B30-D550-45F5-87FF-883CA74A0A1E wds:Q57837657-6F425D96-3EFE-49F1-A98E-0F659D58CB34 wds:Q57837657-7F2454FF-A886-4AA2-8492-6798A22E8799
cites work	Temperature dependence of the energy gap in semiconductors Degenerate p-type conductivity in wide-gap LaCuOS1−xSex (x=0–1) epitaxial films Electrical conductivity control in transparent p-type (LaO)CuS thin films prepared by rf sputtering Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS
author name string	wds:Q57837657-2D5B64DD-F414-4AC2-B105-B49E653120AC wds:Q57837657-5C421F3B-CA15-4437-B8A3-7B54C24DE05D wds:Q57837657-826A2C1F-F663-41CF-A057-E7E24B743902 wds:Q57837657-AF2C83A6-4D03-45FC-BAC0-1BE21B36EC1C wds:Q57837657-E6616039-7588-4F2E-AED2-6057DD9239A9 wds:Q57837657-EDBA5312-FA20-406D-ACFF-9D84A9A0DBEC
author name string	Hidenori Hiramatsu Masahiro Hirano Toshio Kamiya Hiromichi Ohta Kazushige Ueda Kouhei Takafuji
rdfs:label	Intrinsic excitonic photoluminescence and band-gap engineering of wide-gapp-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys (en) Intrinsic excitonic photoluminescence and band-gap engineering of wide-gapp-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys (nl)
skos:prefLabel	Intrinsic excitonic photoluminescence and band-gap engineering of wide-gapp-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys (en) Intrinsic excitonic photoluminescence and band-gap engineering of wide-gapp-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys (nl)
name	Intrinsic excitonic photoluminescence and band-gap engineering of wide-gapp-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys (en) Intrinsic excitonic photoluminescence and band-gap engineering of wide-gapp-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys (nl)
author	wds:Q57837657-8A9F6430-C8A6-476D-BF0A-F5846447896C
author	Hideo Hosono
title	wds:Q57837657-6FD8F57D-AF1F-467E-932E-A3DC31ADE3A0
title	Intrinsic excitonic photoluminescence and band-gap engineering of wide-gapp-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys (en)
page(s)	wds:Q57837657-803EFD37-91E5-4F9D-9AE7-4AFCF4EBF9FC
page(s)	5805-5808
instance of	wds:Q57837657-3F425AE7-006F-4369-A545-A2819A448A53
instance of	scholarly article
main subject	wds:Q57837657-2FFC60BF-11EB-4017-855A-C8D9A99ABCC8 wds:Q57837657-6E414B66-38FC-47A2-866C-71DAA74EC4F8
main subject	photoluminescence semiconductor
published in	wds:Q57837657-8BE28D4D-74E6-44BD-BB95-2311711BCF03
published in	Journal of Applied Physics
issue	wds:Q57837657-EA57417E-4FE0-4C76-A24A-62FAF732448B
volume	wds:Q57837657-11A80E09-F34C-4D6A-84CE-AE15ED886BE4
issue	9
volume	94
DOI	wds:Q57837657-EE75C230-9C20-4C51-B443-5CACBA984C2D
DOI	http://dx.doi.org/10.1063/1.1618932
DOI	10.1063/1.1618932
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q57837657
is cites work of	Single-atomic-layered quantum wells built in wide-gap semiconductorsLnCuOCh(Ln=lanthanide,Ch=chalcogen) Two-dimensional electronic structure and multiple excitonic states in layered oxychalcogenide semiconductors, LaCuOCh (Ch=S, Se, Te): Optical properties and relativistic ab initio study Degenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se) Third-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSe Apparent bipolarity and Seebeck sign inversion in a layered semiconductor: LaZnOP Lattice thermal conductivity in layered BiCuSeO. Heteroepitaxial growth of layered semiconductors, LaZnOPn (Pn=P and As) Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy High-performance p-channel transistors with transparent Zn doped-CuI Optoelectronic properties and electronic structure of YCuOSe
is cites work of	wds:Q57837645-725A9B7C-C4C5-48E1-BEC4-1BDB6F194141 wds:Q57837615-AF6545A1-0F27-48A8-9F62-0C39C2D62009 wds:Q51274117-174A6CD5-A391-42FA-AA84-37B08824882B wds:Q57837620-A95C0C43-B424-4DBD-9578-F4BEDEBE4398 wds:Q57837640-3B6F1A79-AFB2-4CFE-8AF7-896FB2E4C833 wds:Q57837571-A4BAB8E5-1B29-49C5-824B-F51FBA349602 wds:Q57837581-B8741D65-609A-4370-B509-5FE0B80AE2A7 wds:Q98778480-03DAA2F3-57E4-4D81-AC48-13A0D05F166A wds:Q57837588-8775C48E-9B22-4AF4-8112-CA9818D75985 wds:Q57837624-E7AD8A33-B643-42FC-9F8C-2CC74069CE59

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