About: Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates

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scholarly article by Ho Nyung Lee et al published May 2003 in Journal of Applied Physics

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в травні 2003 (uk) im Mai 2003 veröffentlichter wissenschaftlicher Artikel (de) scholarly article by Ho Nyung Lee et al published May 2003 in Journal of Applied Physics (en)
publication date	wds:Q57696603-A7DF45E7-DF9A-4AF9-AF7A-E37D45167266
publication date	2003-05-01 00:00:00Z (xsd:dateTime)
cites work	wds:Q57696603-4D430D15-5561-4739-AD9F-6C569B2D488E wds:Q57696603-4F17167B-7E4C-4D9E-BEA0-2B6D6934F6BD wds:Q57696603-5A40502E-F301-43DA-B090-037B9A3252C2 wds:Q57696603-92ED22D8-9654-41BF-8F84-DECA90B6FFC1 wds:Q57696603-9B683F1F-5B01-43CA-8D85-52BE366A41CD wds:Q57696603-B34C4EF0-5C4E-4565-BA6D-D34A2372A2C5 wds:Q57696603-CE17CEB8-4E2A-4983-87F3-C53E68512F51 wds:Q57696603-D3866F54-D66E-4BC7-A84C-37E4F4232466 wds:Q57696603-E5427E20-1B76-4CD5-BC94-4A9A8C983D64 wds:Q57696603-EEE0D5BC-B56B-46B9-9675-DB6911B621AA
cites work	Fatigue-free ferroelectric capacitors with platinum electrodes Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates. Materials science. Orienting ferroelectric films. Anisotropic ferroelectric properties of epitaxially twinned Bi3.25La0.75Ti3O12 thin films grown with three different orientations Fast intensified‐CCD photography of YBa2Cu3O7−x laser ablation in vacuum and ambient oxygen Epitaxial cuprate superconductor/ferroelectric heterostructures Epitaxial and Smooth Films of a-Axis YBa2Cu3O7 Epitaxial growth of ferroelectric SrBi2Ta2O9 thin films of mixed (100) and (116) orientation on SrLaGaO4(110) Growth and characterization of non-c-oriented epitaxial ferroelectric SrBi2Ta2O9 films on buffered Si(100) Structural and electrical anisotropy of (001)-, (116)-, and (103)-oriented epitaxial SrBi2Ta2O9 thin films on SrTiO3 substrates grown by pulsed laser deposition
author name string	wds:Q57696603-00B4EB5E-161A-47CD-9A0F-11B2F8F7F641 wds:Q57696603-662703F7-EF71-4B6C-B5C1-26EB312537C8 wds:Q57696603-7EA03357-B140-47EB-8977-D3B7A3B6B938 wds:Q57696603-BB925C40-1B26-46E4-B1EF-8DEF0D1E209F wds:Q57696603-E4E0D222-C9D1-41E5-8802-060E45FA4D5C
author name string	Ho Nyung Lee Ulrich Gösele Dietrich Hesse Sung Kyun Lee Nikolai Zakharov
rdfs:label	Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates (en) Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates (nl)
skos:prefLabel	Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates (en) Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates (nl)
name	Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates (en) Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates (nl)
title	wds:Q57696603-BE84FBD2-A525-457E-B567-57F9908131E7
title	Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates (en)
page(s)	wds:Q57696603-4828CC49-CE73-4CDC-99DA-9242B081B4EC
page(s)	5592-5601
instance of	wds:Q57696603-3CB469EF-B003-4704-9EE4-6B3DC4FE3C53
instance of	scholarly article
main subject	wds:Q57696603-32A9B4F1-C47D-4900-9440-C8F4350F10F5 wds:Q57696603-5B90BA22-8FDE-4160-9E77-81888765CDE3
main subject	wd:Q942 lanthanum
published in	wds:Q57696603-51B0AEAE-EF23-485D-8AD0-7E48F5F17876
published in	Journal of Applied Physics
issue	wds:Q57696603-8BE8EB04-59DC-4BC5-8E99-ED566B54E5F5
volume	wds:Q57696603-916CCB87-3D4E-4441-81E4-C1B51DBE38DE
issue	9
volume	93
DOI	wds:Q57696603-18F2048A-B888-4F3F-97B1-67784F715ACF
DOI	http://dx.doi.org/10.1063/1.1565513
DOI	10.1063/1.1565513
corrigendum / erratum	wds:Q57696603-16A16423-CAC7-4CE2-A984-18CA124DCE29
corrigendum / erratum	Erratum: “Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates” [J. Appl. Phys. 93, 5592 (2003)]
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q57696603
is cites work of	Strain tuning of electronic structure inBi4Ti3O12−LaCoO3epitaxial thin films Reducing azimuthal domains in epitaxial ferroelectric lanthanum-substituted bismuth titanate films using miscut yttria-stabilized zirconia substrates Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition Influence of miscut Y2O3-stabilized ZrO2 substrates on the azimuthal domain structure and ferroelectric properties of epitaxial La-substituted Bi4Ti3O12 films
is cites work of	wds:Q57696588-94A01D28-90D0-4AC5-A353-28E20E7FAD5A wds:Q57696409-9068D279-313A-403A-97A6-8685154B5D35 wds:Q61875480-63E8B495-15AF-4767-81BC-21C70B4343E9 wds:Q57696577-23F75887-CCE6-45D6-8782-629BF7295EF9
is main subject of	Erratum: “Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates” [J. Appl. Phys. 93, 5592 (2003)]
is main subject of	wds:Q57696605-49B3E256-4343-43DE-A307-5AA545C0DF24

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