About: Polarity-dependent pinning of a surface state

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scholarly article in Physical Review B, vol. 91 no. 20, May 2015

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) article scientifique publié en 2015 (fr) наукова стаття, опублікована в травні 2015 (uk) im Mai 2015 veröffentlichter wissenschaftlicher Artikel (de) scholarly article in Physical Review B, vol. 91 no. 20, May 2015 (en)
publication date	wds:Q57388878-31FCFFFE-1E98-43F2-A233-F079C0B7C68E
publication date	2015-05-18 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q57388878-A6B3E22A-2EE2-40F2-A533-E2E0947B2CB5
language of work or name	English
cites work	wds:Q57388878-064EA954-9CF9-4761-ADF1-ABBF063E7544 wds:Q57388878-3BFC95B3-E16B-481E-B7A6-48903370088C wds:Q57388878-8EFEE985-3B96-4F0F-B9F4-C0034F729D5A wds:Q57388878-A51C3050-E85C-476E-BF3B-2DA17103DDCC wds:Q57388878-C64C7FE0-72D5-4A26-93FE-91DC4C7DEC34 wds:Q57388878-EC2ADFDC-1204-4F16-A9BC-611EADAF06D6 wds:Q57388878-F9D5B5BA-A464-4E5C-9481-D9DD112D7EF3
cites work	Surface States and Rectification at a Metal Semi-Conductor Contact Theory and Application for the Scanning Tunneling Microscope Microscopic origins of surface states on nitride surfaces Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces Quantitative determination of local potential values in inhomogeneously doped semiconductors by scanning tunneling microscopy Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers Hidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowires
author name string	wds:Q57388878-0A93A8E6-465D-4550-9591-C541BC21C8E2
author name string	H. Eisele
rdfs:label	Polarity-dependent pinning of a surface state (en) Polarity-dependent pinning of a surface state (nl)
skos:prefLabel	Polarity-dependent pinning of a surface state (en) Polarity-dependent pinning of a surface state (nl)
name	Polarity-dependent pinning of a surface state (en) Polarity-dependent pinning of a surface state (nl)
author	wds:Q57388878-32CD1D1A-1D72-46DB-AA0D-0D6A577508A4 wds:Q57388878-3B435B8F-3E62-437A-B4CD-3F0C5AEA5245 wds:Q57388878-66CCD4E2-9B4F-45A7-9C4C-718C60A719C3 wds:Q57388878-6CD4E340-30AC-4848-904E-89A3DBB9EFAA
author	Rafal E. Dunin-Borkowski Philipp Ebert Michael Schnedler Verena Portz
title	wds:Q57388878-CDD8CE45-A944-4F61-8F0C-FD142E30B445
title	Polarity-dependent pinning of a surface state (en)
instance of	wds:Q57388878-62C2DD77-D5E2-4C0C-A999-8C05B7029C9F
instance of	scholarly article
published in	wds:Q57388878-AF640E1E-1AAE-45B5-AB13-2DB5B7144D2B
published in	Physical Review B
issue	wds:Q57388878-3E8D8418-1F4D-445C-B2C6-8391465D72F3
volume	wds:Q57388878-34B77A33-E9B3-44C1-B1F0-85F1663EBA8C
issue	20
volume	91
DOI	wds:Q57388878-A62CD98F-F921-4D11-A286-1E184A47B273
DOI	http://dx.doi.org/10.1103/PHYSREVB.91.205309
DOI	10.1103/PHYSREVB.91.205309
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q57388878
is cites work of	Importance of quantum correction for the quantitative simulation of photoexcited scanning tunneling spectra of semiconductor surfaces Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy Intrinsic electronic properties of high-quality wurtzite InN Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯0) surfaces
is cites work of	wds:Q57388845-D2DAA03A-9BCB-4E49-A820-6B58C36E1B50 wds:Q57388825-87A4996C-7855-457D-B5F7-5C60EB0FE6CE wds:Q57388847-DC7BA114-87BB-48ED-8784-8A2F6BCE2560 wds:Q57388820-3891F28E-51F5-4AE2-B88E-45DBD1213363

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