About: Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation

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scholarly article in Physical Review B, vol. 83 no. 23, June 2011

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в червні 2011 (uk) im Juni 2011 veröffentlichter wissenschaftlicher Artikel (de) scholarly article in Physical Review B, vol. 83 no. 23, June 2011 (en)
publication date	wds:Q56489913-C7719A0F-5423-4CB1-B6FE-ACBF151BA29A
publication date	2011-06-06 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q56489913-8C333AE8-1DBF-4BBD-BCD4-802B2D966EF9
language of work or name	English
cites work	wds:Q56489913-046E8831-A800-49D6-A171-6ACBFBE4F8EF wds:Q56489913-7F157C2F-9D8F-4AD7-8E70-857ACC463BFA wds:Q56489913-9ADB8407-1ED0-4C0B-A6CB-F6AB214FF240 wds:Q56489913-9C6A6DA5-9E10-4C3B-A064-13F4B3BC94A4 wds:Q56489913-A336CFEB-8B8A-49C9-96B9-C05D02C689A4 wds:Q56489913-B2B2BA76-4CAE-449F-92B6-16F1F8A6A562 wds:Q56489913-C322A736-2C18-4E64-94A7-517F15AA28E8 wds:Q56489913-CCABAC15-D927-4D36-87CF-1FD0AE983360 wds:Q56489913-FE8B5780-4260-4E19-9651-26A489285161
cites work	Effects of Configuration Interaction on Intensities and Phase Shifts Crystal data for high-pressure phases of silicon Experimental evidence for semiconducting behavior of Si-XII Room temperature writing of electrically conductive and insulating zones in silicon by nanoindentation Annealing of nanoindentation-induced high pressure crystalline phases created in crystalline and amorphous silicon Thermal stability of metastable silicon phases produced by nanoindentation Experimental study of the crystal stability and equation of state of Si to 248 GPa. Superconductivity in doped cubic silicon Hot phonons in an electrically biased graphene constriction.
author name string	wds:Q56489913-3B99BAF0-FA01-42F4-9850-906E4531CF63 wds:Q56489913-5473637B-8CE6-47E0-9B26-291FEBBF1AF9 wds:Q56489913-B4C1C9CC-0812-4D8E-91C6-81E9953F1431 wds:Q56489913-C92C4291-143C-4685-B405-93CB18C5AE49
author name string	B. C. Johnson J. E. Bradby J. S. Williams J. C. McCallum
rdfs:label	Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation (en) Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation (nl)
skos:prefLabel	Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation (en) Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation (nl)
name	Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation (en) Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation (nl)
author	wds:Q56489913-9C03FCC4-7A73-4798-BB54-386926872551
author	Bianca Haberl
title	wds:Q56489913-87F8BB77-3C97-421D-83D6-86B0D618F910
title	Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation (en)
instance of	wds:Q56489913-F61C34AC-A418-4AB1-8598-5D9DC8788673
instance of	scholarly article
published in	wds:Q56489913-A6AC2BA0-00CF-4943-B0CA-FA5762FE6AB9
published in	Physical Review B
issue	wds:Q56489913-BFB7B461-931C-4E27-B2F1-33E9770EC6C8
volume	wds:Q56489913-C87E4CFD-BE80-4AE6-95FB-AAAB8E38A831
issue	23
volume	83
DOI	wds:Q56489913-977562E0-6253-4BB6-A62C-BA89A8051D36
DOI	http://dx.doi.org/10.1103/PHYSREVB.83.235205
DOI	10.1103/PHYSREVB.83.235205
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q56489913
is cites work of	Evidence for the R8 phase of germanium. The Temperature-Dependent Si1-xGe x Raman Shift.
is cites work of	wds:Q49882341-BAF082A8-15C4-41DA-AA25-2A0C4A9B6D52 wds:Q48048723-B02575ED-7704-4178-8834-7D5E85A6A0FF

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