About: Gallium vacancies and the yellow luminescence in GaN

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scholarly article by Jörg Neugebauer & Chris G Van de Walle published 22 July 1996 in Applied Physics Letters

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в липні 1996 (uk) article scientifique publié en 1996 (fr) im Juli 1996 veröffentlichter wissenschaftlicher Artikel (de) scholarly article by Jörg Neugebauer & Chris G Van de Walle published 22 July 1996 in Applied Physics Letters (en)
publication date	wds:Q56424817-FB8B36C0-51D3-4F5C-8014-FA82771824A0
publication date	1996-07-22 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q56424817-A9FA774F-6C59-4251-AB79-80C4C8FF3605
language of work or name	English
author name string	wds:Q56424817-B691D192-A746-4EF0-8D87-982D73F8E366
author name string	Jörg Neugebauer
rdfs:label	Gallium vacancies and the yellow luminescence in GaN (en) Gallium vacancies and the yellow luminescence in GaN (nl)
skos:prefLabel	Gallium vacancies and the yellow luminescence in GaN (en) Gallium vacancies and the yellow luminescence in GaN (nl)
name	Gallium vacancies and the yellow luminescence in GaN (en) Gallium vacancies and the yellow luminescence in GaN (nl)
author	wds:Q56424817-5CA5FDA6-A1AC-4910-91D3-E7CD1A533AEA
author	Chris G. Van de Walle
title	wds:Q56424817-35911ACE-7962-4658-B452-DB91E28AA246
title	Gallium vacancies and the yellow luminescence in GaN (en)
page(s)	wds:Q56424817-531CCA18-CE7F-4FA2-83FB-604DA5552B08
page(s)	503-505
instance of	wds:Q56424817-7FB392BF-AE36-42BF-85B5-2A509BFF97E4
instance of	scholarly article
main subject	wds:Q56424817-CAB5ADEC-929C-4733-B03D-36E3F65BCADA
main subject	gallium
published in	wds:Q56424817-93BAFD2D-5294-402A-A216-5665FDFDC094
published in	Applied Physics Letters
issue	wds:Q56424817-FA03C8A2-4AAD-45AC-A0D8-4E6A85B0060D
volume	wds:Q56424817-B31A5005-4F1A-4A5D-866E-C84D751E6B8B
issue	4
volume	69
DOI	wds:Q56424817-301F88A5-2B02-4835-9967-92A4DC747E72
DOI	http://dx.doi.org/10.1063/1.117767
DOI	10.1063/1.117767
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q56424817
is cites work of	Defect identification in semiconductors with positron annihilation: Experiment and theory First-principles study of native point defects in ZnO First-principles studies of beryllium doping of GaN Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition Theory of doping and defects in III–V nitrides GaN thin films produced by pulsed laser deposition Strain in Si doped GaN and the Fermi level effect Do we really understand dislocations in semiconductors? Effect of oxygen on the growth of (101̄0) GaN surfaces: The formation of nanopipes Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation. Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition III-nitride core-shell nanorod array on quartz substrates Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE. Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires. Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma Properties of a hole trap inn-type hexagonal GaN ODMR of bound excitons in Mg-doped GaN Near-band-edge photoluminescence emission in AlxGa1−xN under high pressure Role of nitrogen vacancies in the luminescence of Mg-doped GaN Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds Electron energy loss studies of dislocations in GaN thin films Gallium nitride nanowires doped with silicon Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE. Co-adsorption of water and oxygen on GaN: Effects of charge transfer and formation of electron depletion layer. Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment A theoretical study of O chemisorption on GaN (0001)/(0001̄) surfaces Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure. Dynamic defect correlations dominate activated electronic transport in SrTiO3. Two yellow luminescence bands in undoped GaN. Correlated compositions, structures, and photoluminescence properties of gallium nitride nanoparticles Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN Latent Order in High-Angle Grain Boundary of GaN. Ultrafast spatiotemporal photocarrier dynamics near GaN surfaces studied by terahertz emission spectroscopy
is cites work of	wds:Q63366658-3C1BBA03-3BB0-443A-8758-5C7639580F95 wds:Q57435986-FC0D73DD-07FC-473A-8289-F2CCE500B336 wds:Q61986401-46F0805F-0610-4285-AF63-204D7537C0E7 wds:Q92287774-8016440D-4BD4-4AE9-9DC2-16E381214806 wds:Q41812479-953FF3FD-6F6D-491A-AB71-8224660B55E0 wds:Q55430661-965E762E-7175-45E8-B7AE-651175D4190A wds:Q56424785-2AB1FAB0-2D3E-4479-AEA3-DB6976B8810F wds:Q50641257-70F384BE-A4C0-4153-ACB3-80A7D5C335A6 wds:Q62472110-B631E4CF-F7CB-4772-9E01-A09C0C0D7022 wds:Q56424558-78DDF080-C787-411F-9860-47A88B8FC9AC wds:Q59440424-8DE6E35E-E2BE-44FE-807C-F71486E033DF wds:Q57424649-23A97BCC-37DC-4F06-A22D-664FCBC2A51A wds:Q59903355-A751A400-DEEC-4725-A6B7-51D78D71201C wds:Q58463744-F613A7F7-5539-4DD1-8154-066F21BCA221 wds:Q58621693-3CC60238-B44B-4688-AC30-640987E7157E wds:Q99594592-08C4EECF-C44B-477C-9BD7-CF0048D93AAE wds:Q105446370-01A2276E-7726-407C-B942-1C7CA0C04793 wds:Q35763898-0750A4FA-C3E3-4C12-8238-C9DA28367DE2 wds:Q46306352-304D6390-1150-4314-92CC-71C4F76D631B wds:Q56424520-E3890B16-7079-4045-AF89-C29173471E04 wds:Q53164164-3210942A-8D0E-418E-A1EB-0EB726A4818A wds:Q55360944-BAB02E30-CCB3-450B-BF76-DA62CCB1CB4D wds:Q51743287-A450CC73-B692-42C3-8F6F-B8412E4E2314 wds:Q56423372-107C5FE1-00FC-4115-9002-A5266B6D83E7 wds:Q61834726-566E1C85-1F86-466A-8E9E-DA5AAE15C80E wds:Q58463775-5746C30A-A326-4533-BFDE-23AE9719B4AF wds:Q57942998-9C51273D-456F-429C-B3B0-EC1411EE2355

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