About: Dielectric Screening in Atomically Thin Boron Nitride Nanosheets

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scholarly article by Lu Hua Li et al published 5 December 2014 in Nano Letters

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в грудні 2014 (uk) im Dezember 2014 veröffentlichter wissenschaftlicher Artikel (de) scholarly article by Lu Hua Li et al published 5 December 2014 in Nano Letters (en)
publication date	wds:Q56038991-302FE4C5-A609-48C8-8DB0-289D1278BED8
publication date	2014-12-05 00:00:00Z (xsd:dateTime)
author name string	wds:Q56038991-3A1787ED-8118-4CA4-B9DF-5A002628B20C wds:Q56038991-5C280AF5-B2A0-4DBD-9455-7875108FC824 wds:Q56038991-72D79D7D-5286-422C-B8CD-B58A98D2C6C1 wds:Q56038991-CF797AC0-EFCC-4BAA-AC6A-4CE714F87749 wds:Q56038991-E558ED09-BEA7-4C70-ACF5-D6F7585A13AA
author name string	Rafael Roldán Emmanuele Cappelluti Lu Hua Li Tan Xing Elton J. G. Santos
rdfs:label	Dielectric Screening in Atomically Thin Boron Nitride Nanosheets (en) Dielectric Screening in Atomically Thin Boron Nitride Nanosheets (nl)
skos:prefLabel	Dielectric Screening in Atomically Thin Boron Nitride Nanosheets (en) Dielectric Screening in Atomically Thin Boron Nitride Nanosheets (nl)
name	Dielectric Screening in Atomically Thin Boron Nitride Nanosheets (en) Dielectric Screening in Atomically Thin Boron Nitride Nanosheets (nl)
author	wds:Q56038991-10EDB046-3C79-43B8-8548-204295E5AB8B wds:Q56038991-1BD2414F-0B9F-4359-9022-834F12CAE992 wds:Q56038991-23753DF4-12F4-48B8-97B2-8F8E4465DF1B
author	Ying Chen Kenji Watanabe Takashi Taniguchi
title	wds:Q56038991-C5D6E36A-ACDD-4F70-8EBD-989FE3F68052
title	Dielectric Screening in Atomically Thin Boron Nitride Nanosheets (en)
page(s)	wds:Q56038991-F13A5061-6722-4012-A477-163E7AD59C4C
page(s)	218-223
instance of	wds:Q56038991-A1504ED6-A5DC-4D72-98F7-C8207595C330
instance of	scholarly article
main subject	wds:Q56038991-CB7A4467-3993-4E20-AFC9-CADAF0B6E2C8
main subject	boron
PubMed ID	wds:Q56038991-B25FC8D5-2999-4EBB-BE45-4B06A5607BB7
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/25457561
PubMed ID	25457561
published in	wds:Q56038991-7CA21B83-F2CB-4372-AA07-0F7830BDFB29
published in	Nano Letters
issue	wds:Q56038991-1DA44923-E43A-451F-BB83-728A6C35E907
volume	wds:Q56038991-E084BF71-3F50-491A-AE95-BA8F5BB65FC6
issue	1
volume	15
DOI	wds:Q56038991-D4541747-0FD4-4585-89F6-6F9CBABDB624
DOI	http://dx.doi.org/10.1021/NL503411A
DOI	10.1021/NL503411A
ResearchGate publication ID	wds:Q56038991-FFB8C5AD-381D-47B3-B9B6-985F9C4DCBEF
ResearchGate publication ID	269183395
arXiv ID	wds:Q56038991-7AFF1BB2-5A20-4C9C-A68D-530BBE49E60E
arXiv ID	1503.00380
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q56038991
is cites work of	Variations in Crystalline Structures and Electrical Properties of Single Crystalline Boron Nitride Nanosheets Thermally conductive, dielectric PCM-boron nitride nanosheet composites for efficient electronic system thermal management. Acetylene chain reaction on hydrogenated boron nitride monolayers: a density functional theory study Atomically Thin Boron Nitride: Unique Properties and Applications Mechanical properties of atomically thin boron nitride and the role of interlayer interactions Elastic, electronic and optical properties of new 2D and 3D boron nitrides Raman signature and phonon dispersion of atomically thin boron nitride. Epitaxy of highly ordered organic semiconductor crystallite networks supported by hexagonal boron nitride. One-Step Synthesis of Boron Nitride Quantum Dots: Simple Chemistry Meets Delicate Nanotechnology. The ambipolar transport behavior of WSe2 transistors and its analogue circuits Protecting the properties of monolayer MoS₂ on silicon based substrates with an atomically thin buffer. Asymmetric electric field screening in van der Waals heterostructures. Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer Two-dimensional semiconductors pave the way towards dopant-based quantum computing
is cites work of	wds:Q34501544-4B17F1F1-7F29-4214-A730-CF474CED9E90 wds:Q48232497-DDA41CAF-57F4-4D8C-981D-182F445FC5A3 wds:Q46598763-5AAFEA06-269B-4B43-984C-177DA6DD081D wds:Q94599941-0985A6BD-7E65-4567-85F7-DD6902EC6336 wds:Q56038985-F0C6F7E9-2DB6-4FF0-AF97-2273CA9F60FC wds:Q59096108-71F3C21E-7CAD-4D4B-AC28-E5496657B1FF wds:Q37483691-2B15FB58-9744-4369-B3C3-2AC6A005C379 wds:Q33849807-0866E3B8-2E2F-48F0-9DFC-71D577D42134 wds:Q48921040-72536C47-3F9A-449F-B91A-C29135D13CFD wds:Q53277346-8CC95277-CB42-4127-B869-365AF38B2583 wds:Q56038989-49431ACD-0440-469D-A51B-5887CAEAAB52 wds:Q28821733-57AFA6C7-0A49-42A2-9B8B-CC5286B97D30 wds:Q36574161-C0487140-AD6C-434E-8195-20153D83A6F3 wds:Q47974465-3953F122-D98B-4D47-80EB-26C0F8AB92CE wds:Q58738779-C6E0B4A7-822D-4132-BA47-69B1BAC7F392

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