About: Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

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scholarly article in Physical Review B, vol. 85 no. 3, January 2012

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rdf:type	Item
description	wetenschappelijk artikel (nl) article scientifique publié en 2012 (fr) наукова стаття, опублікована в січні 2012 (uk) im Januar 2012 veröffentlichter wissenschaftlicher Artikel (de) 2012 ജനുവരി 17 നു പ്രസിദ്ധീകരിച്ച ശാസ്ത്ര ലേഖനം (ml) scholarly article in Physical Review B, vol. 85 no. 3, January 2012 (en)
publication date	wds:Q56028095-8672466E-8768-49FB-B405-A2E6E907F8C1
publication date	2012-01-17 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q56028095-4972A2BD-8C18-44C5-B612-FAEFFBEA400A
language of work or name	English
author name string	wds:Q56028095-1C28196B-096E-4FF6-9C82-B5CF54439A1A wds:Q56028095-37B5CD0B-963F-4EFD-8DE5-E20CE6392878 wds:Q56028095-9B7E8E39-2AA6-49B6-AA1E-96F38685954A wds:Q56028095-B987DBFA-F958-43C7-B7A0-C45DD3D54207
author name string	Soon Cheol Hong J. D. Lee S. W. Han In Gee Kim
rdfs:label	Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) (en) Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) (nl)
skos:prefLabel	Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) (en) Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) (nl)
name	Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) (en) Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) (nl)
author	wds:Q56028095-DD2FADAF-608A-4A30-BCDF-2E2BDF3DFC91
author	Won Seok Yun
title	wds:Q56028095-CAB7AABE-1F06-4990-9406-6A328304FD57
title	Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te) (en)
instance of	wds:Q56028095-A5765930-9562-44CB-94C4-E128D71F5D75
instance of	scholarly article
main subject	wds:Q56028095-7D7FBEC5-CC60-47B5-AD54-F280BA3D4D9C wds:Q56028095-EBBFBCBF-3A51-4BE4-B8A1-1BAAA75B7C8F
main subject	semiconductor transition metal
published in	wds:Q56028095-6EBDB2CF-BCB7-4044-B8D5-E1100C0D44F8
published in	Physical Review B
issue	wds:Q56028095-0E6828AA-6795-45FE-817B-187BF8A6D36B
volume	wds:Q56028095-79E6DE62-C7A7-43FA-B8EA-330FE5082140
issue	3
volume	85
DOI	wds:Q56028095-D7CF7B9E-3DA4-488D-AAB9-56649EA5EA97
DOI	http://dx.doi.org/10.1103/PHYSREVB.85.033305
DOI	10.1103/PHYSREVB.85.033305
Fatcat ID	wds:Q56028095-057D934C-5C7C-46D3-8E67-C481A4152626
Fatcat ID	release_ekzu3tgz5zbjdimf62vsehn6zy
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q56028095
is cites work of	Graphene and graphene-like layered transition metal dichalcogenides in energy conversion and storage Origins of Ripples in CVD-Grown Few-layered MoS2 Structures under Applied Strain at Atomic Scales Dynamic diffraction effects and coherent breathing oscillations in ultrafast electron diffraction in layered 1T-TaSeTe Electromechanics in MoS₂ and WS₂: nanotubes vs. monolayers. Superconducting Dome in a Gate-Tuned Band Insulator Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors. Strain-engineered artificial atom as a broad-spectrum solar energy funnel Effects of strain on band structure and effective masses in MoS2 Effect of interlayer interactions on exciton luminescence in atomic-layered MoS2 crystals Fundamental limits of exciton-exciton annihilation for light emission in transition metal dichalcogenide monolayers Outstanding mechanical properties of monolayer MoS2 and its application in elastic energy storage Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides Two-dimensional material-based saturable absorbers: towards compact visible-wavelength all-fiber pulsed lasers. Strain engineering of selective chemical adsorption on monolayer MoS2. High quantity and quality few-layers transition metal disulfide nanosheets from wet-milling exfoliation Pressure induced metallization with absence of structural transition in layered molybdenum diselenide. Monolayer MoS2: Trigonal warping, theΓvalley, and spin-orbit coupling effects Structures, stabilities, and electronic properties of defects in monolayer black phosphorus Large variations in both dark- and photoconductivity in nanosheet networks as nanomaterial is varied from MoS2 to WTe2. Controlling magnetism of MoS2 sheets by embedding transition-metal atoms and applying strain Modulating the phase transition between metallic and semiconducting single-layer MoS2 and WS2 through size effects. Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2 Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition. Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode Photocurrent generation with two-dimensional van der Waals semiconductors Controlling ferromagnetic easy axis in a layered MoS2 single crystal. Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics Effects of substrate type and material-substrate bonding on high-temperature behavior of monolayer WS2 Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared Yb- and Er-doped fiber laser Q-switched with an optically uniform, broadband WS2 saturable absorber K-Λ crossover transition in the conduction band of monolayer MoS2 under hydrostatic pressure Pressure-induced metallization of molybdenum disulfide Continuously tunable electronic structure of transition metal dichalcogenides superlattices Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2. Controlling phase transition for single-layer MTe2 (M = Mo and W): modulation of the potential barrier under strain. Tuning the electronic properties of transition-metal trichalcogenides via tensile strain. Single layer of MX₃ (M = Ti, Zr; X = S, Se, Te): a new platform for nano-electronics and optics. Composition-dependent Raman modes of Mo(1-x)W(x)S2 monolayer alloys Strain-induced giant second-harmonic generation in monolayered 2H-MoX2 (X = S, Se, Te) Tungsten Ditelluride: a layered semimetal. Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures. Thickness-dependent mobility in two-dimensional MoS₂ transistors Monolayer-by-monolayer stacked pyramid-like MoS2 nanodots on monolayered MoS2 flakes with enhanced photoluminescence. Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector Thermionic Energy Conversion Based on Graphene van der Waals Heterostructures. Strain distributions and their influence on electronic structures of WSe2-MoS2 laterally strained heterojunctions. Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection. The role of momentum-dark excitons in the elementary optical response of bilayer WSe2. Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides Self-sensing, tunable monolayer MoS2 nanoelectromechanical resonators Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface.

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