About: Philip Hofmann

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An Entity of Type : wikibase:Item, within Data Space : wikidata.demo.openlinksw.com associated with source document(s)

researcher

Attributes	Values
rdf:type	Item
description	forskare (sv) ikertzailea (eu) researcher (en) 연구원 (ko) 研究者 (ja) araştırmacı (tr) wetenschapper (nl) дослідник (uk) изилдөөчү (ky) 研究者 (zh) deutscher Physiker (de) հետազոտող (hy) hulumtues (sq)
rdfs:label	Philip Hofmann (de) Philip Hofmann (en) Philip Hofmann (es) Philip Hofmann (it) Philip Hofmann (nl) Philip Hofmann (sl) Philip Hofmann (ast)
skos:prefLabel	Philip Hofmann (de) Philip Hofmann (en) Philip Hofmann (es) Philip Hofmann (it) Philip Hofmann (nl) Philip Hofmann (sl) Philip Hofmann (ast)
name	Philip Hofmann (de) Philip Hofmann (en) Philip Hofmann (es) Philip Hofmann (it) Philip Hofmann (nl) Philip Hofmann (sl) Philip Hofmann (ast)
given name	wds:Q50623153-2D0F5304-6D65-4175-ACE3-F8CD70842771
given name	Philip
instance of	wds:Q50623153-F1DC6B73-2352-4087-84B5-24B13DC9FC7F
instance of	Homo sapiens
Google Knowledge Graph ID	wds:Q50623153-0E01A10C-23BD-41DC-BD73-8DB913A36E86
Google Knowledge Graph ID	http://g.co/kg/g/11cmgwz4_s
Google Knowledge Graph ID	/g/11cmgwz4_s
occupation	wds:Q50623153-7D33001D-609D-46E1-BCE9-F4FDAC6999DA
NUKAT ID	wds:Q50623153-28F38A91-AF63-44B7-9457-D033BA26A846
place of birth	wds:Q50623153-5B794FF4-30FA-49E4-954E-BBB667E41631
sex or gender	wds:Q50623153-CDE7EFB6-3D8C-4F24-9BDF-AB089C8562D4
ISNI	wds:Q50623153-63970F2A-6D8D-4218-961B-29194815CDCB
VIAF ID	wds:Q50623153-32A16E30-1D78-49DB-98B4-59B848B24BA7
GND ID	wds:Q50623153-5CDB4115-2AF0-4D6C-9117-F67604BB828C
Library of Congress authority ID	wds:Q50623153-DB7CE5BE-A143-4502-BF6B-C87213013541
IdRef ID	wds:Q50623153-56C8DF79-6DAB-4528-B7E0-9A84BA63EBB0
SHARE Catalogue author ID	wds:Q50623153-904659B7-69DD-433F-A420-63FD92058E0B
date of birth	wds:Q50623153-14660651-b041-4894-a330-c87049cad5ba
family name	wds:Q50623153-CB468415-4311-446B-BD37-8599A438AA33
National Library of Israel J9U ID	wds:Q50623153-340A8E4B-FFA6-4625-A60B-5E7404ED1CC5
VIAF ID	http://viaf.org/viaf/52395622
GND ID	https://d-nb.info/gnd/136935893
Library of Congress authority ID	http://id.loc.gov/authorities/names/no2009024452
IdRef ID	http://www.idref.fr/130559202/id
occupation	researcher
NUKAT ID	n2008117559
place of birth	Berlin
sex or gender	male
ISNI	000000011642894X
VIAF ID	52395622
GND ID	136935893
Library of Congress authority ID	no2009024452
IdRef ID	130559202
SHARE Catalogue author ID	504766
date of birth	1967-03-03 00:00:00Z (xsd:dateTime)
family name	Hofmann
National Library of Israel J9U ID	987007342130705171
ORCID iD	wds:Q50623153-055FE7FF-DBFB-4999-ACB6-0ECA0BD63138
ORCID iD	https://orcid.org/0000-0002-7367-5821
ORCID iD	0000-0002-7367-5821
ArTS author ID	wds:Q50623153-A773DC20-4811-455F-996F-47C9B1CF02C3
ArTS author ID	15824
ResearcherID	wds:Q50623153-AD29C093-8089-4CE3-B391-841AA9119E9C
ResearcherID	B-5938-2008
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q50623153 https://de.wikipedia.org/wiki/Philip_Hofmann_(Physiker)
is author of	Direct View of Hot Carrier Dynamics in Graphene Surface-Dominated Transport on a Bulk Topological Insulator Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi(2)Se(3). Oxygen switching of the epitaxial graphene-metal interaction Bandgap opening in graphene induced by patterned hydrogen adsorption Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS2. Atomic hydrogen adsorbate structures on graphene Ultrafast Band Structure Control of a Two-Dimensional Heterostructure. Emergent quantum confinement at topological insulator surfaces Electron-phonon coupling in the two-dimensional electron gas on Bi2Se3 Electronic structure of epitaxial single-layer MoS2 Large Tunable Rashba Spin Splitting of a Two-Dimensional Electron Gas inBi2Se3 Transfer-free electrical insulation of epitaxial graphene from its metal substrate Surface-sensitive conductance measurements Disentangling surface, bulk, and space-charge-layer conductivity in Si(111)-(7 x 7) Bottom-up approach for the low-cost synthesis of graphene-alumina nanosheet interfaces using bimetallic alloys. Strong energy dependence of the electron-phonon coupling strength on Bi(100) Facile electrochemical transfer of large-area single crystal epitaxial graphene from Ir(1 1 1)

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