About: Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices

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About: Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices Goto Sponge NotDistinct Permalink

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scientific article published on 11 February 2014

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rdf:type	Item
description	videnskabelig artikel (da) article científic (ca) articolo scientifico (it) artigo científico (pt) bilimsel makale (tr) vedecký článok (sk) vetenskaplig artikel (sv) vědecký článek (cs) wetenschappelijk artikel (nl) wissenschaftlicher Artikel (de) научни чланак (sr) bài báo khoa học (vi) article scientifique (fr) artículu científicu espublizáu en 2014 (ast) наукова стаття, опублікована в лютому 2014 (uk) scientific article published on 11 February 2014 (en) 2014 թվականի փետրվարի 11-ին հրատարակված գիտական հոդված (hy) مقالة علمية نشرت في 11 فبراير 2014 (ar)
publication date	wds:Q37576103-FF499D65-4D85-456B-9A8F-A75EFEF0C470
publication date	2014-02-11 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q37576103-D7DB429A-144D-43D8-9C79-B2637A7A2EB5
language of work or name	English
exact match	wds:Q37576103-D9327326-97DD-4D50-B1CC-CF76AE0FA6E8
exact match	https://scigraph.springernature.com/pub.10.1038/srep04058
cites work	wds:Q37576103-0AF0B65C-46B8-4803-91F8-D2A6EBF2474A wds:Q37576103-11C1A489-1EC1-4D88-94FC-6C62496F639F wds:Q37576103-19F8E487-2D1A-4D44-9A95-6822370A8DEA wds:Q37576103-22CAF802-C9DF-4706-AFEB-CD016FD03410 wds:Q37576103-2EAAA218-E179-4BE0-91DA-251AED34C5E2 wds:Q37576103-4F804259-52D7-485F-8CB7-C5B8D57001B8 wds:Q37576103-6F5D9B07-010F-4B6B-B1E7-E20579D7527E wds:Q37576103-7DF0AB79-F328-476F-8D5B-A08986B06AD3 wds:Q37576103-87066B78-BF91-491E-9EFB-E996CBE3FC97 wds:Q37576103-C0A44FF1-3B0E-476F-879F-7A47D894F8E1 wds:Q37576103-F91E3108-6A0A-4BC3-861E-9A2C5344A19D
cites work	Nanoionics-based resistive switching memories The missing memristor found Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Observation of conducting filament growth in nanoscale resistive memories. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration. Electrical phenomena in amorphous oxide films Scaling behaviors of reset voltages and currents in unipolar resistance switching Formation and instability of silver nanofilament in Ag-based programmable metallization cells
author name string	wds:Q37576103-2DF5ED7E-F52A-4B52-A8E9-AD3167757103 wds:Q37576103-4D6AE983-835A-480F-A0D6-AB8662A50E2E wds:Q37576103-7DFACBD9-2636-42B0-A11F-2EFB3D85A9FE wds:Q37576103-82457FF4-97D3-4B6E-B0B8-F9E81DA97617 wds:Q37576103-AAF8C7F6-5356-44A0-A4CC-9FFE7CC23A27 wds:Q37576103-F371D6AB-0ED7-4ED3-8592-D2DF197CE0A1 wds:Q37576103-FB75E6B5-5EFB-428E-8563-BE6D662CFC6F
author name string	Ying Li D S Hong Y S Chen L L Wei H W Yang J R Sun B G Shen
rdfs:label	Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices (en) Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices (nl) Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices (ast)
skos:prefLabel	Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices (en) Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices (nl) Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices (ast)
name	Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices (en) Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices (nl) Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices (ast)
title	wds:Q37576103-14E3D0E6-1894-4CC0-8C48-38E5885A909B
title	Evolution of conduction channel and its effect on resistance switching for Au-WO₃-x-Au devices (en)
page(s)	wds:Q37576103-D163D5BE-439D-4482-A59D-4558AE14C841
page(s)	4058
instance of	wds:Q37576103-A95B0975-D8AC-4A38-97B0-8F4D39CBC7AD
instance of	scholarly article
PubMed ID	wds:Q37576103-2227BF53-0D68-4559-AA69-D08915C9B871
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/24514950
PubMed ID	24514950
published in	wds:Q37576103-3CFAAD40-B070-4C41-9B4C-D53DD8CDBA62
published in	Scientific Reports
volume	wds:Q37576103-6EBA0731-B997-4E7B-A13B-425E636BAFA6
volume	4
DOI	wds:Q37576103-13D7A683-96E9-4690-B638-B20AE3485A7E
DOI	http://dx.doi.org/10.1038/SREP04058
DOI	10.1038/SREP04058
copyright license	wds:Q37576103-d6fa3c1a-c077-48b8-b914-8d9e54176911
copyright status	wds:Q37576103-fa0e27a8-522b-4e95-a965-027b1af9c10a
copyright license	Creative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported
copyright status	copyrighted
ResearchGate publication ID	wds:Q37576103-5B97E7BB-88DE-41F6-A689-CA83BC355114
ResearchGate publication ID	260153307
Dimensions Publication ID	wds:Q37576103-F5DE69B5-A11B-4EAF-8862-48B517071E7D
Dimensions Publication ID	1021711699
PMCID	wds:Q37576103-02ECD623-F631-43A0-A43F-C99AF18221A0
PMCID	3920219
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q37576103
is cites work of	Study of multi-level characteristics for 3D vertical resistive switching memory Synaptic Metaplasticity Realized in Oxide Memristive Devices. Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

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