About: Impact of defect occupation on conduction in amorphous Ge2Sb2Te5.

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scientific article published on 16 August 2016

Attributes	Values
rdf:type	Item
description	videnskabelig artikel (da) article científic (ca) articolo scientifico (it) artigo científico (pt) bilimsel makale (tr) vedecký článok (sk) vetenskaplig artikel (sv) vědecký článek (cs) wetenschappelijk artikel (nl) wissenschaftlicher Artikel (de) научни чланак (sr) article scientifique (fr) artículu científicu espublizáu en 2016 (ast) наукова стаття, опублікована в серпні 2016 (uk) مقالة علمية نشرت في 16 أغسطس 2016 (ar) scientific article published on 16 August 2016 (en)
publication date	wds:Q37177015-82F1F4D1-4349-454D-BF57-4A1D50033D33
publication date	2016-08-16 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q37177015-142D3349-BC2A-4E0B-9473-69AD0AEB5483
language of work or name	English
exact match	wds:Q37177015-A8A69A74-F495-4605-B9AB-7940BCE164E6
exact match	https://scigraph.springernature.com/pub.10.1038/srep31699
cites work	wds:Q37177015-04B54906-6312-41FC-AB8F-C6DE7717E42E wds:Q37177015-364A7C86-5E1F-4191-8001-9C63AD134E1A wds:Q37177015-3B510F72-5B11-4E8E-B572-C38AF410D006 wds:Q37177015-67CFACE5-4794-49AD-AAE7-5C1BB5168BB7 wds:Q37177015-68E27F68-AF8C-4183-80EF-D15CE6A4C78C wds:Q37177015-76E1C7F9-A0A5-41C7-A53D-EAD0E12BE491 wds:Q37177015-9D25146E-7540-4CB6-9809-7DEC90712BEA wds:Q37177015-FA6F31F1-D2FA-4B73-BBFD-906AEE9279A8
cites work	Big Data: Astronomical or Genomical? Computing: A vision for data science Reversible Electrical Switching Phenomena in Disordered Structures Photoinduced effects and metastability in amorphous semiconductors and insulators Relation between bandgap and resistance drift in amorphous phase change materials Aging mechanisms in amorphous phase-change materials Theory of electron band tails and the Urbach optical-absorption edge Understanding Phase-Change Memory Alloys from a Chemical Perspective
author name string	wds:Q37177015-F8FAF5A1-DB94-4CF7-A414-CB61BBEC4115
author name string	Matthias Kaes
rdfs:label	Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. (en) Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. (nl) Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. (ast)
skos:prefLabel	Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. (en) Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. (nl) Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. (ast)
name	Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. (en) Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. (nl) Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. (ast)
author	wds:Q37177015-E346619C-8AD2-4372-AB94-BAAC9259DDB0
author	Martin Salinga
title	wds:Q37177015-1F6E01E6-682E-45DD-AFED-9E596154CC90
title	Impact of defect occupation on conduction in amorphous Ge2Sb2Te5. (en)
page(s)	wds:Q37177015-8E104E6B-F4E3-4868-939E-7158FEA0BF4F
page(s)	31699
instance of	wds:Q37177015-B52B772A-0704-4BFB-ADA1-FF877EE2105A
instance of	scholarly article
PubMed ID	wds:Q37177015-A65211C7-84DF-468B-8768-361462304475
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/27526783
PubMed ID	27526783
published in	wds:Q37177015-EFDF4C31-BF9E-4290-9D02-F7B946EFFC96
published in	Scientific Reports
volume	wds:Q37177015-54E94D05-C1D5-4B7D-971B-461C6A163AAE
volume	6
DOI	wds:Q37177015-7260E83A-BE1A-40BE-9D8C-F3D7A2928534
DOI	http://dx.doi.org/10.1038/SREP31699
DOI	10.1038/SREP31699
copyright license	wds:Q37177015-5e5b3b61-fb46-4837-b56b-7fbfa7b4b8c2
copyright status	wds:Q37177015-30f7c2f0-6a6c-487e-991f-d8b4be069175
copyright license	Creative Commons Attribution 4.0 International
copyright status	copyrighted
Dimensions Publication ID	wds:Q37177015-C6A75CC4-FBE8-498F-8430-461C3A2D8E83
Dimensions Publication ID	1000478127
PMCID	wds:Q37177015-C3257673-C73D-46C5-83A4-96DBD026F5B3
PMCID	4985640
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q37177015
is cites work of	Te-based chalcogenide materials for selector applications. Observation of carrier localization in cubic crystalline Ge2Sb2Te5 by field effect measurement. Localised states and their capture characteristics in amorphous phase-change materials
is cites work of	wds:Q48262896-546FD4AC-DD7D-4827-9A1A-A458B497C1E9 wds:Q64082781-61B74080-7D46-4C09-8143-6B1B145BA934 wds:Q41388149-572FD3AE-E22C-4DC6-8A38-A3EA83C9DFCD

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