About: Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation

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About: Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation Goto Sponge NotDistinct Permalink

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scientific article published on 01 November 1988

Attributes	Values
rdf:type	Item
description	wetenschappelijk artikel (nl) наукова стаття, опублікована в листопаді 1988 (uk) im November 1988 veröffentlichter wissenschaftlicher Artikel (de) գիտական հոդված հրատարակված 1988 թվականի նոյեմբերի 1-ին (hy) scientific article published on 01 November 1988 (en) artículu científicu espublizáu en payares de 1988 (ast)
publication date	wds:Q78004145-2F258D72-1D55-476F-A7DB-0CDCAB98AC45
publication date	1988-11-01 00:00:00Z (xsd:dateTime)
language of work or name	wds:Q78004145-92070EC0-EEF1-40B4-B73A-09276B3FB75E
language of work or name	English
cites work	wds:Q78004145-0593D92F-F67A-416C-BE35-17EA68CC716B wds:Q78004145-262AF05B-555B-46F3-BA2B-1D360EFFA7E9 wds:Q78004145-2D73E382-6ACF-4A20-9FF4-BA4DFFD228D3 wds:Q78004145-2E83373F-452B-4494-BF62-4373FF1B4702 wds:Q78004145-307C6F25-1DA3-421B-84C5-51665133CFC1 wds:Q78004145-3DE35CE5-2591-4B66-A4A1-523CBAEF5726 wds:Q78004145-9C6C17BD-874B-418A-9017-D9D92CC66749 wds:Q78004145-9F9E4E53-700B-4FC7-B6DD-0BCDDAB33068 wds:Q78004145-D31AC9BF-264E-494D-AC24-D2AC35CDFB89 wds:Q78004145-D4BEED71-D2CF-41B9-A407-502A7DDBA266 wds:Q78004145-EE2D2976-7E8F-4BF2-8B23-6C1EC9D7D86F
cites work	Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids Theory of the chemical shift at relaxed (110) surfaces of III-V semiconductor compounds 3d transition metals on InP(110): A comparative study of reactive interface evolution Electronic properties and chemistry of Ti/GaAs and Pd/GaAs interfaces Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures Atomic distributions across metal-III-V-compound-semiconductor interfaces Surface shifts in the In 4d and P 2p core-level spectra of InP(110) Direct evidence of the onset of In surface segregation for Co/InP(110) Surface segregation at metalndashIII-V-compound-semiconductor interfaces Temperature-dependent reaction and buried-interface movement for Ti/GaAs(100) and Cr/GaAs(100) Temperature-dependent interface evolution for Ti/GaAs(100) and Cr/GaAs(100)
author name string	wds:Q78004145-05A1C833-03F6-4E02-8200-19D89ED45C84 wds:Q78004145-4389E5B6-E677-4282-97AE-C56C42635064 wds:Q78004145-8BB3E8BA-D5AC-4FE6-A3D2-08FA516C363E wds:Q78004145-963B575D-917D-43FB-ACA8-F67ADB844A16 wds:Q78004145-DC41632A-A377-4C37-9795-67E39B66D611 wds:Q78004145-E7EB0D8E-B527-4A3C-B103-D06347821978
author name string	Gao Y Lin Z Weaver JH Aldao CM Trafas BM Vitomirov IM
rdfs:label	Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation (en) Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation (nl)
skos:prefLabel	Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation (en) Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation (nl)
name	Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation (en) Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation (nl)
title	wds:Q78004145-D047A788-442E-4C12-AA5D-2AFCD5FFDED3
title	Pd overlayer growth on InP(110), GaAs(110), and InSb(110): Comparisons of anion surface segregation (en)
page(s)	wds:Q78004145-97E5CFF2-3653-47DF-BAD5-16B438C8AB03
page(s)	10776-10786
instance of	wds:Q78004145-17308442-8CD3-4971-B21B-0CB5B7F3E860
instance of	scholarly article
PubMed ID	wds:Q78004145-644D6D61-4CDA-4D19-BF76-D5F3AEBD5C89
PubMed ID	http://rdf.ncbi.nlm.nih.gov/pubchem/reference/9945933
PubMed ID	9945933
published in	wds:Q78004145-A38CAA98-027B-4AE9-890E-EEC76EE86D16
published in	Physical Review B
issue	wds:Q78004145-4DA39F21-D260-4627-BF66-7FB8927C2F79
volume	wds:Q78004145-7E04FB49-5588-4E13-BDBF-C4CD8DD73188
issue	15
volume	38
DOI	wds:Q78004145-6A22C192-25A9-4E90-8462-BB92189A7A06
DOI	http://dx.doi.org/10.1103/PHYSREVB.38.10776
DOI	10.1103/PHYSREVB.38.10776
is about of	https://www.wikidata.org/wiki/Special:EntityData/Q78004145
is cites work of	Abrupt interfaces with novel structural and electronic properties: Metal-cluster deposition and metal-semiconductor junctions Theory of Schottky-contact formation on GaAs(110)
is cites work of	wds:Q78195921-1A160CC6-EF0C-412D-BF3F-BF6207FF9B44 wds:Q78205553-DABC5B4A-99C3-4C1A-85AD-DC3EE298707F

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